Regrowth mechanisms in flash lamp processing of heteroepitaxial SiC on silicon substrates

Journal of Crystal Growth

Volumn 277, Issue 1-4, 2005, Pages 162-169

  Smith, M ^a   McMahon, R A ^a   Voelskow, M ^b   Skorupa, W ^b   Stoemenos, J ^c  

^a Department of Engineering ^*  (United Kingdom)

^b INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^c ARISTOTLE UNIVERSITY OF THESSALONIKI   (Greece)

Author keywords

A1. Crystal morphology; A1. Diffusion; A1. Interfaces; A1. Mass transfer; A3. Liquid phase epitaxy; B. Silicon carbide

Indexed keywords

ANNEALING; CARBON; CRYSTALLIZATION; DIFFUSION; EPITAXIAL GROWTH; LIQUID PHASE EPITAXY; MASS TRANSFER; MELTING; OPTIMIZATION; SILICON; TRANSMISSION ELECTRON MICROSCOPY;

CRYSTAL MORPHOLOGY; FLASH LAMP ANNEALING; INTERFACES; LATERAL VARIATIONS; SILICON OVERLAYERS (SOL);

SILICON CARBIDE;

EID: 15944391641     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.02.008     Document Type: Article

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