Novel Pb(Ti, Zr)O 3(PZT) crystallization technique using flash lamp for ferroelectric RAM (FeRAM) embedded LSIs and one transistor type FeRAM devices

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 4 B, 2002, Pages 2630-2634

  Yamakawa, Koji ^a   Imai, Keitaro ^a   Arisumi, Osamu ^a   Arikado, Tsunetoshi ^a   Yoshioka, Màsaki ^b   Owada, Tatsushi ^b   Okumura, Katsuya ^c  

^a TOSHIBA CORPORATION   (Japan)

^b USHIO INC   (Japan)

^c UNIVERSITY OF TOKYO   (Japan)

Author keywords

Crystallization; FeRam; Ferroelectrics; Flash lamp; Morphology; PZT; RTA

Indexed keywords

FERAM; FLASH LAMP; PZT;

CRYSTAL STRUCTURE; CRYSTALLIZATION; FERROELECTRIC MATERIALS; LSI CIRCUITS; RANDOM ACCESS STORAGE; RAPID THERMAL ANNEALING; SILICA; THIN FILMS;

LEAD COMPOUNDS;

EID: 0942305803     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.41.2630     Document Type: Article

References (3)

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2. K. Yamakawa, O. Arisumi, K. Tsutsumi, I. Kunishima, S. Tanaka and T. Arikado: Proc. ISAF (1998) p. 159.
3. K. Yamakawa, O. Arisumi, K. Imai, K. Natori, H. Kanaya, I. Kunishima and T. Arikado: submitted to Integr. Ferroelectr., Proc. ISIF 2001 (2001).