Crystallization of amorphous-Si films by flash lamp annealing

Applied Surface Science

Volumn 242, Issue 1-2, 2005, Pages 185-191

  Pecz B ^a   Dobos, L ^a   Panknin, D ^b   Skorupa, W ^b   Lioutas, C ^c   Vouroutzis, N ^c  

^a RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE   (Hungary)

^b INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^c ARISTOTLE UNIVERSITY OF THESSALONIKI   (Greece)

Author keywords

Crystallization; Si; Thin films; Transmission electron microscopy

Indexed keywords

COMPUTER SIMULATION; CRYSTALLIZATION; EXCIMER LASERS; LIQUID CRYSTAL DISPLAYS; MATHEMATICAL MODELS; NUCLEATION; PHOTODIODES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; QUENCHING; RAPID THERMAL ANNEALING; SILICON WAFERS; STRAIN; THERMAL EXPANSION; THERMODYNAMIC STABILITY; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

AMORPHOUS THIN FILMS; EXCIMER LASER ANNEALING (ELA); FLASH LAMP ANNEALING (FLA); SOLID PHASE CRYSTALLIZATION (SPC);

AMORPHOUS FILMS;

EID: 11844305910     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.08.015     Document Type: Article

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