Mainstream rapid thermal processing for source-drain engineering from first applications to latest results

Materials Science and Engineering: B

Volumn 114-115, Issue SPEC. ISS., 2004, Pages 141-150

  Niess, J ^a   Paul, S ^a   Buschbaum, S ^a   Schmid, P ^a   Lerch, W ^a  

^a MATTSON THERMAL PRODUCTS GMBH   (United States)

Author keywords

Application; Applications; Nickel silicide; Rapid thermal processing; Source drain engineering; Ultra shallow junction formation

Indexed keywords

APPLICATIONS; CMOS INTEGRATED CIRCUITS; DIFFUSION; HEATING; NICKEL COMPOUNDS; SURFACE PHENOMENA;

NICKEL SILICIDES; RAPID THERMAL PROCESSING; SOURCE-DRAIN ENGINEERING; ULTRA-SHALLOW JUNCTION FORMATION;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 10644261331     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2004.07.036     Document Type: Conference Paper

References (55)

1. International Technology Roadmap for Semiconductors 2003 Edition, http://public.itrs.net/files/2003itrs/home2003.htm.
2. R. Sharangpani, S.P. Tay, in: F. Roozeboom, J.C. Gelpey, M.C. Ozturk, K. Reid, D.L. Kwong (Eds.), ECS Proceedings of Symposium on Rapid Thermal and Other Short-Time Processing Technologies 9, 2000, p. 203.
3. G. Roters, R. Hayn, W. Kegel, O. Storbeck, S. Frigge, G. Feldmeyer, H.J. Meyer, E. Schroer, in F. Roozeboom, E. Gusev, L.J. Chen, M.C. Ozturk, D.L. Kwong, P.J. Timans (Eds.), ECS Proceedings of Symposium on Advanced Short-Time Thermal Processing for Si-Based CMOS Devices, 14, 2003, p. 385.
4. J.P. Lu, D. Miles, J. Zhao, A. Gurba, Y. Xu, C. Lin, M. Hewson, J. Ruan, L. Tsung, R. Kuan, T. Grider, D. Mercer, C. Montgomery, IEDM Tech. Digest (2002) 371.
5. W. Lerch, S. Paul, D.F. Downey E.A. Arevalo, in: F. Roozeboom, E. Gusev, L.J. Chen, M.C. Ozturk, D.L. Kwong, P.J. Timans (Eds.), ECS Proceedings of Symposium on Advanced Short-Time Thermal Processing for Si-Based CMOS Devices, 14, 2003, p. 43.
6. B. Lojek, In: H. Kitayama, B. Lojek, G. Minor, A. Tillmann (Eds.), Proceedings of 7th International Conference on Advanced Thermal Processing of Semiconductors-RTP 99, 1999, p. 292.
7. W.K. Mammel, United States Patent 3,627,590 (1968).
8. M. Birnbaum, J. Appl. Phys. 36 (1965) 657.
9. C. Hill, in: J.F. Gibbons, L.D. Hess, T.W. Sigmon (Eds.), MRS Symp. Proc., 1, 1981, p. 361.
10. D.M. Gamm, J.C. Gelpey, T. Thrum, G.C. Stuart, J.K. Elliot, in: J. Gelpey, B. Lojek, Z. Nenyei, R. Singh (Eds.), Proceedings of 10th IEEE International Conference on Advanced Thermal Processing of Semiconductors-RTP 2002, 2002, p. 5.
11. R. Surdeanu, Y. Ponomarev, R. Cerutti, B. Pawlak, C. Dachs, P. Stolk, M. Verheijen, M. Kaiser, M. Hopstaken, J. van Berkum, F. Roozeboom, L. Nanver, I. Hoflijk, R. Lindsay, in: P.J. Timans, E. Gusev, F. Roozeboom, M.C. Öztürk, D.L. Kwong (Eds.), ECS Proc. Symp. on Rapid Thermal and Other Short-Time Processing Technologies III, 11, 2002, p. 413.
12. J. Venturini, M. Hemandez, D. Zahorski, G. Kerrien, T. Samet, D. Débarre, J. Boulmer, C. Laviron, M.N. Semeria, J.L. Santailler, D. Camel, in: F. Roozeboom, E. Gusev, L.J. Chen, M.C. Öztürk, D.L. Kwong, P.J. Timans (Eds.), ECS Proc. Symp. on Advanced Short-Time Thermal Processing for Si-Based CMOS Devices, 14, 2003, p. 131.
13. V. Privitera, G. Mannino, A. La Magna, G. Fortunato, L. Mariucci, B.G. Svensson, in: F. Roozeboom, E. Gusev, L.J. Chen, M.C. Öztürk, D.L. Kwong, P.J. Timans (Eds.), ECS Proc. Symp. on Advanced Short-Time Thermal Processing for Si-Based CMOS Devices, 14, 2003, p. 137.
14. J. Hebb, A. Shajii, in: F. Roozeboom, J.C. Gelpey, M.C. Öztürk, J. Nakos (Eds.), ECS Proc. Symp. on Advances in Rapid Thermal Processing, 10, 1999, p. 375.
15. W.S. Yoo A. Atanos, in: T. Hori, B. Lojek, Y. Tanabe, R.P.S. Thakur (Eds.), Proceedings on 6th International Conference on Advanced Thermal Processing of Semiconductors-RTP 98, 1998, p. 21.
16. W.S. Yoo, T. Fukada, H. Kuribayashi, Y. Hiraga, K. Kang, H. Kitayama, N. Takahashi, K. Enjoji, K. Sunohara, in: D.P. De-Witt, J. Kowalski, B. Lojek, A. Tilmann (Eds.), Proceedings on 8th International Conference on Advanced Thermal Processing of Semiconductors-RTP 2000, 2000, p. 224.
17. V.I. Kuznetsov, A.B. Storm, and E.H.A. Grannemann, in: H. Kitayama, B. Lojek, G. Minor, A. Tillmann (Eds.), Proceedings on 7th International Conference on Advanced Thermal Processing of Semiconductors-RTP 99, 1999, p. 252.
18. Y.Z. Hu, S.P. Tay, J. Vac. Sci. Technol. A 21 (3) (2003) 676.
19. M. Glück, U. König, J. Hersener, Z. Nényei, A. Tillmann, in: J.J. Wortman, J.C. Gelpey, M.L. Green, S.R.J. Brueck, F. Roozeboom (Eds.), Mat. Res. Soc. Symp. Proc., 342, 1994, p. 215.
20. W. Lerch, G. Roters, P. Münzinger, R. Mader, R. Ostermeir, Mater. Sci. Eng. B 54 (1998) 153-160.
21. T. Hori, in: M.L. Green, J.C. Gelpey, J. Wortman, R. Singh (Eds.), Mat. Res. Soc. Symp. Proc., 224, 1991, p. 355.
22. R. Bieneck, Z. Nényei, IEEE Trans. Electron. Devices 40 (9) (1993) 1706.
23. G. Roters, W. Lerch, Z. Nenyei, A. Huber, G. Obermeier, in: H. Kitayama, B. Lojek, G. Minor, A. Tillmann (Eds.), Proceedings on 7th International Conference on Advanced Thermal Processing of Semiconductors-RTP 99, 1999, p. 106.
24. B. Mattson, P. Timans, S.P. Tay, D.J. Devine, J. Kim, in: D.P. DeWitt, J. Gelpey, B. Lojek, Z. Nenyei (Eds.), Proceedings on 9th International Conference on Advanced Thermal Processing of Semiconductors-RTP 2001, 2001, p. 13.
25. D.S. Saigal, G. Lai, L. Yang, J. Su, K. Ngan, M. Narashiman, F. Chen, A. Singhal, D. Lopes, S. Lian, W. Cao, K. Tsai, P. Lo, S.K. Lee, J. Shi, in: M. Graef, D.N. Patel (Eds.), SPIE Proceedings on Multilevel Interconnect Technology III SPIE, 3883, 1999, p. 84.
26. M.C. Öztürk, J. Liu, H. Mo, N. Pesovic, IEDM Tech. Digest (2002) 957.
27. A. Shima, H. Ashihara, T. Mine, V. Goto, M. Horiuchi, Y. Wang, S. Talwar, A. Hiraiwa, IEDM Tech. Digest (2003) 493.
28. J.C. Gelpey, K. Elliot, D. Camm, S. McCoy, J. Ross, D.F. Downey, E.A. Arevalo, in: P.J. Timans, E. Gusev, F. Roozeboom, M.C. Öztürk, D.L. Kwong (Eds.), ECS Proc. Symp. on Rapid Thermal and Other Short-Time Processing Technologies III, 11, 2002, p. 313.
29. P.J. Timans, W. Lerch, J. Niess, S. Paul, N. Acharya, Z. Nényei, in: J. Gelpey, B. Lojek, Z. Nényei, R. Singh (Eds.), Proceedings on llth International Conference on Advanced Thermal Processing of Semiconductors-RTP 2003, 2003, p. 17.
30. R. Lindsay, B. Pawlak, J. Kittl, K. Henson, C. Torregiani, S. Giangrandi, R. Surdeanu, W. Vandervorst, A. Mayur, J. Ross, S. McCoy, J. Gelpey, K. Elliot, X. Pages, A. Satta, A. Lauwers, P. Stolk, K. Maex, in: T.-J. King, B. Yu, R.J.P. Lander, S. Saito (Eds.), Mat. Res. Soc. Symp. Proc., 765, 2003, p. D7.4.1.
31. E. Morifuji, M. Kanda, N. Yanagiya, S. Matsuda, S. Inaba, K. Okano, K. Takahashi, M. Nishigori, H. Tsuno, T. Yamamoto, K. Hiyama, M. Takayanagi, H. Oyamatsu, S. Yamada, T. Noguchi, M. Kakumu, IEDM Tech. Digest (2002) 655-658.
32. B. J. Pawlak, R. Lindsay, R. Surdeanu, X. Pages, W. Vandervorst, K. v. d. Jeugd, in: F. Roozeboom, E. Gusev, L.J. Chen, M.C. Öztürk, D.L. Kwong, P.J. Timans (Eds.), ECS Proc. Symp. on Advanced Short-Time Thermal Processing for Si-Based CMOS Devices, 14, 2003, p. 99.
33. J. Hwang, H. Kennel, P. Packan, M. Taylor, M. Liu, R. James M. Kuhn, in: F. Roozeboom, E. Gusev, L.J. Chen, M.C. Öztürk, D.L. Kwong, P.J. Timans (Eds.), ECS Proc. Symp. on Advanced Short-Time Thermal Processing for Si-Based CMOS Devices, 14, 2003, p. 35-42.
34. M.M. Mansoori, A. Jain, D.E. Mercer, L. Robertson P. Kohli, in: P.J. Timans, E. Gusev, F. Roozeboom, M.C. Öztürk, D.L. Kwong (Eds.), ECS Proc. Symp. on Rapid Thermal and Other Short-Time Processing Technologies III, 11, 2002, p. 389.
35. N. Acharya, and P.J. Timans, in: M.C. Öztürk, F. Roozeboom, P.J. Timans, E.P. Gusev, G. Miner, Li.J. Chen, D.L. Kwong (Eds.), ECS Proc. Symp. on Advanced Short-Time Thermal Processing for Si-Based CMOS Devices II, 1, 2004, 10.
36. Z. Nényei, J. Niess, S. Buschbaum, K. Meyer, W. Dietl, R. Berger, S. Miethaner, H. Gruber, R. Wahlich, S. Chamberlain, in: P.J. Timans, E. Gusev, F. Roozeboom, M.C. Öztürk, D.L. Kwong (Eds.), ECS Proc. Symp. on Rapid Thermal and Other Short-Time Processing Technologies III, 11, 2002, p. 261.
37. J. Niess, R. Berger, P.J. Timans, Z. Nényei, in: J. Gelpey, B. Lojek, Z. Nenyei, R. Singh (Eds), Proceedings on 10th IEEE International Conference on Advanced Thermal Processing of Semiconductors-RTP 2002, 2002, p. 49.
38. L. Csepregi, J. Gyulai, S.S. Lau, Mater. Chem. Phys. 46 (1996) 178.
39. K. Tsui, K. Takeuchi, T. Mogami, IEDM Tech. Digest (1999) 9.
40. H. Shimada, I. Ohshima, S.-I. Nakao, M. Nakagawa, K. Kanemoto, M. Hirayama, S. Sugawa, T. Ohmi, IEDM Tech. Digest (2001) 67.
41. J.O. Borland, Solid State Technol. 45 (6) (2002) 83.
42. W. Lerch, S. Paul, J. Niess, F. Cristiano, Y. Lamrani, P. Calvo, N. Cherkashin, D.F. Downey, A.E. Arevalo, in: M.C. Öztürk, F. Roozeboom, P.J. Timans, E.P. Gusev, G. Miner, Li.J. Chen, D.L. Kwong (Eds.), ECS Proc. Symp. on Advanced Short-Time Thermal Processing for Si-Based CMOS Devices II, 1, 2004, p. 89.
43. B.L. Crowder, J. Electrochem. Soc. 117 (6) (1970) 671.
44. B.L. Crowder, J. Electrochem. Soc. 118 (6) (1971) 943.
45. E. Landi, S. Guimaraes, S. Solmi, Appl. Phys. A4 (1987) 135.
46. J.O. Borland, in: D.F. Downey, M.E. Law, A.P. Claverie, M.J. Rendon (Eds.), Mat. Res. Soc. Symp. Proc., 717, 2002, p. C 1.1.1.
47. K. Maex, E. Kondoh, A. Lauwers, A. Steegen, M. de Potter, P. Besser, J. Proost, in: M.C. Ötztürk, F. Roozeboom, P.J. Timans, S.H. Pas (Eds.), Mat. Res. Soc. Symp. Proc., 525, 1998, p. 297.
48. P.R. Besser, A. Lauwers, N. Roelandts, K. Maex, W. Blum, R. Alvis, M. Srucchi, M. de Potter, in: S.P. Murarka, D.B. Fraser, M. Eizenberg, R. Tung, R. Madar (Eds.), Mat. Res. Soc. Symp. Proc., 514, 1998, p. 375.
49. K. Maex, A. Lauwers, P. Besser, E. Kondoh, M. de Potter, A. Steegen, IEEE Trans. Electron. Devices 46 (7) (1999) 1545.
50. S. Buschbaum, O. Fursenko, D. Bolze, D. Wolansky, V. Melnik, J. Nieß, W. Lerch Presented at the Materials for Advanced Metallization Conference, Brussels, 2004; accepted for publication in a special volume of Microelectronic Engineering.
51. J.A. Kittl, A. Lauwers, O. Chamirian, M. Van Dal, A. Akheyar, O. Richard, J.G. Lisoni, M. De Potter, R. Lindsay, K. Maex, in: F. Roozeboom, E. Gusev, L.J. Chen, M.C. Öztürk, D.L. Kwong, P.J. Timans (Eds.), ECS Proc. Symp. on Advanced Short-Time Thermal Processing for Si-Based CMOS Devices, 14, 2003, p. 177.
52. A. Lauwers, M. de Potter, O. Chamirian, R. Lindsay, C. Demeurisse, C. Vrancken, K. Maex, Microelectron. Eng. 64 (2002) 131.
53. C. Lavoie, R. Purtell, C. Coia, C. Detavemier, P. Desjardins, J. Jordan-Sweet, C. Cabral, Jr., F.M. D'Heurle, J.M.E. Harper, in: P.J. Timans, E. Gusev, F. Roozeboom, M.C. Öztürk, D.L. Kwong (Eds.), ECS Proc. Symp. on Rapid Thermal and Other Short-Time Processing Technologies III, 11, 2002, p. 455.
54. A. Lauwers, J.A. Kittl, A. Akheyar, M. Van Dal, O. Chamirian, M. De Porter, R. Lindsay, K. Maex, in: F. Roozeboom, E. Gusev, L.J. Chen, M.C. Öztürk, D.L. Kwong, P.J. Timans (Eds.), ECS Proc. Symp. on Advanced Short-Time Thermal Processing for Si-Based CMOS Devices, 14, 2003, p. 167.
55. D. Ma, D.Z. Chi, W.D. Wang, A.S.W. Wong, S.J. Chua, in: J. Veteran, D.L. O'Meara, V. Misra, P. Ho (Eds.), Mat. Res. Soc. Symp. Proc., 716, 2002, p. 47.