메뉴 건너뛰기
Applied Physics Letters
Volumn 33, Issue 8, 1978, Pages 751-753
Thermally assisted flash annealing of silicon and germanium
Author keywords

[No Author keywords available]
Indexed keywords

EID: 0011404730     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.90528     Document Type: Article
Times cited : (44)
References (13)
  • 10
    • 84950872241 scopus 로고    scopus 로고
    • In all these experiments, the flash lamp was a linear quartz envelope design with a 5‐cm gap length, filled with xenon. It was energized with a 600‐J pulse from a 100‐μF capacitor charged to 3460 V. This excitation level is near the explosion/damage threshold for such a lamp design, and the quartz envelopes were changed frequently to maintain the original light output. Shields to protect personnel against flying quartz fragments are an absolute necessity in experiments of this type. Sample preheat temperatures were determined from a thermocouple embedded in a “dummy sample”, the same size as the sample being annealed, adjacent to it on the heating stage.
  • 11
    • 84950852974 scopus 로고
    • Channeling—Theory, Observation and Application, edited by D. V. Morgan (Wiley, New York)
    • (1973)

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.