Investigation of thick 3C-SiC films re-grown on thin 35 nm "flash lamp annealed" 3C-SiC layers

Materials Science Forum

Volumn 457-460, Issue I, 2004, Pages 313-316

  Ferro, G ^a   Panknin, D ^b   Stoemenos, J ^c   Balloud, C ^a   Camassel, J ^a   Polychroniadis, E ^c   Monteil, Y ^a   Skorupa, W ^b  

^a CNRS   (France)

^b INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^c ARISTOTLE UNIVERSITY OF THESSALONIKI   (Greece)

Author keywords

3C SiC; Epitaxy; Flash lamp annealing; LTPL; TEM

Indexed keywords

ANNEALING; CARBONIZATION; DEPOSITION; EPITAXIAL GROWTH; FILM GROWTH; INTERFACES (MATERIALS); MIXTURES; PHONONS; PHOTOLUMINESCENCE; SILICON CARBIDE; THERMAL EXPANSION; TRANSMISSION ELECTRON MICROSCOPY;

DEFECT DENSITY; ENERGY DENSITY; FLASH LAMP ANNEALING; THERMAL EXPANSION COEFFICIENTS;

THICK FILMS;

EID: 8744233948     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.457-460.313     Document Type: Conference Paper

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