Flash lamp supported deposition of 3C-SiC (FLASiC) - A promising technique to produce high quality cubic SiC layers

Materials Science Forum

Volumn 457-460, Issue I, 2004, Pages 175-180

  Skorupa, W ^a   Panknin, D ^a   Anwand, W ^a   Voelskow, M ^a   Ferro, G ^b   Monteil, Y ^b   Leycuras, A ^c   Pezoldt, J ^d   McMahon, R ^e   Smith, M ^e   Camassel, J ^f   Stoemenos, J ^g   Polychroniadis, E ^g   Godignon, P ^h   Mestres, N ^h   Turover, D ⁱ   Rushworth, S ^j   Friedberger, A ^k  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^b UNIVERSITÉ LYON 1   (France)

^c CRHEA CNRS   (France)

^d ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

^e UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^f UNIV MONTPELLIER   (France)

^g ARISTOTLE UNIVERSITY OF THESSALONIKI   (Greece)

^h INSTITUTO DE MICROELECTRÓNICA DE BARCELONA   (Spain)

ⁱ SAVOIE TECHNOLAC   (France)

^j Epichem Ltd   (United Kingdom)

^k AIRBUS GROUP INNOVATIONS   (Germany)

more..

Author keywords

3C SiC; Flash lamp annealing; Microstructure; Modelling; Nanoscale epitaxy

Indexed keywords

ANNEALING; COMPUTER SIMULATION; CRYSTAL MICROSTRUCTURE; EPITAXIAL GROWTH; LASER APPLICATIONS; NANOSTRUCTURED MATERIALS;

3C-SIC; FLASH LAMP ANNEALING; LASER ANNEALING; NANOSCALE EPITAXY;

SILICON CARBIDE;

EID: 8744267407     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.457-460.175     Document Type: Conference Paper

References (6)

1. D. Panknin, J. Stoemenos, M. Eickhoff, V. Heera, N. Vouroutzis, G. Krötz and W. Skorupa: Mat. Sci. Forum, Vol. 353-356 (2001) p. 151.
2. Patents pending for the FLASiC and i-FLASiC processes.
3. H. Wirth, D.Panknin, W.Skorupa, and E.Niemann: Appl. Phys. Lett. Vol. 74 (1999), P. 979.
4. The reader is referred to the articles of Ferro et al., Polychroniadis et al., and Smith et al. to get a complete picture of the present state of the art of FLASiC.
5. T. Chassagne, G. Ferro, D. Chaussende, F. Cauwet, Y. Monteil and J. Bouix: Thin Solid Films Vol. 402 (2002), p. 83.
6. M.Voelskow et al., to be published.