Microstructural characterization of 3C-SiC thin films grown by flash lamp induced liquid phase epitaxy

Materials Science Forum

Volumn 483-485, Issue , 2005, Pages 295-298

  Ferro, G ^a   Panknin, D ^b   Polychroniadis, E K ^c   Monteil, Y ^a   Skorupa, W ^b   Stoemenos, J ^c  

^a UNIVERSITÉ CLAUDE BERNARD LYON 1   (France)

^b INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^c ARISTOTLE UNIVERSITY OF THESSALONIKI   (Greece)

Author keywords

Epitaxial growth; Flash lamp annealing; Liquid phase epitaxy

Indexed keywords

INTERFACES (MATERIALS); LIQUID PHASE EPITAXY; MICROSTRUCTURE; SILICON CARBIDE; TRANSMISSION ELECTRON MICROSCOPY;

CAPPING LAYER; FLASH LAMP ANNEALING; SILICON OVERLAYER (SOL);

THIN FILMS;

EID: 35148875651     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-963-6.295     Document Type: Conference Paper

References (7)

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3. Patent is pending.
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