The beneficial role of flash lamp annealing on the epitaxial growth of the 3C-SiC on Si

Applied Surface Science

Volumn 184, Issue 1-4, 2001, Pages 377-382

  Panknin, D ^a   Stoemenos, J ^b   Eickhoff, M ^c   Heera, V ^a   Voelskow, M ^a   Skorupa, W ^a  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^b ARISTOTLE UNIVERSITY OF THESSALONIKI   (Greece)

^c DAIMLER AG   (Germany)

Author keywords

3C SiC interface; Flash lamp annealing; TEM

Indexed keywords

ANNEALING; EPITAXIAL GROWTH; FILM GROWTH; HEAT LOSSES; INTERFACES (MATERIALS); MELTING; SEMICONDUCTING FILMS; SOLIDIFICATION;

FLASH LAMP ANNEALING;

SILICON CARBIDE;

EID: 0035852230     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(01)00521-9     Document Type: Article

References (14)