Improvement of performance deviation and productivity of MOSFETs with gate length below 30 nm by flash lamp annealing

IEEE Transactions on Semiconductor Manufacturing

Volumn 17, Issue 3, 2004, Pages 286-291

  Nishinohara, Kazumi T ^a   Ito, Takayuki ^a   Suguro, Kyoichi ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

Annealing; MOSFET; Performance; Shallow junction

Indexed keywords

ANNEALING; CARRIER MOBILITY; COMPUTER SIMULATION; CRYSTALS; DIFFUSION; ION IMPLANTATION; SCATTERING; SEMICONDUCTOR DOPING;

COULOUMB SCATTERING; SHALLOW JUNCTIONS; SHORT CHANNEL EFFECT (SCE); SPIKE ANNEALING;

MOSFET DEVICES;

EID: 4344578292     PISSN: 08946507     EISSN: None     Source Type: Journal    
DOI: 10.1109/TSM.2004.831931     Document Type: Conference Paper

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