Overview of SiC power electronics

Diamond and Related Materials

Volumn 6, Issue 10, 1997, Pages 1480-1484

  Chelnokov, V E ^a   Syrkin, A L ^b   Dmitriev, V A ^a,c  

^a IOFFE INSTITUTE   (Russian Federation)

^b UNIV MONTPELLIER   (France)

^c Howard University   (United States)

Author keywords

Liquid phase epitaxy; Power semiconductor devices; Silicon carbide

Indexed keywords

EID: 0000296327     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-9635(97)00120-9     Document Type: Article

References (23)

1. J.R. O'Connor, J. Simltens (Eds.) Silicon Carbide, A High Temperature Semiconductor, Pergamon Press, Oxford, 1960; H.K. Henisch, R. Roy (Eds.), Silicon carbide - 1968, Proceedings of the International Conference on Silicon Carbide, Pergamon Press, New York, 1969.
2. J.R. O'Connor, J. Simltens (Eds.) Silicon Carbide, A High Temperature Semiconductor, Pergamon Press, Oxford, 1960; H.K. Henisch, R. Roy (Eds.), Silicon carbide - 1968, Proceedings of the International Conference on Silicon Carbide, Pergamon Press, New York, 1969.
3. A.E. Otblesk, V.E. Chelnokov, in: Problems of Physics and Technology of Wide Band Gap Semiconductors, LETI, Leningrad, 1980 pp. 197-211 (in Russian).
4. V.E. Chelnokov, Materials Science and Engineering B II (1992) 103.
5. S. Nakashima, H. Matsunami, S. Yoshida, H. Harima (Eds.), Silicon Carbide and Related Materials 1995, Institute of Physics Conference Series No. 142, IOP Publishing, Bristol, 1996.
6. A. Itoh, T. Kimoto, H. Matsunami, in: S. Nakashima, H. Matsunami, S. Yoshida, H. Harima (Eds.), Silicon Carbide and Related Materials 1995, Institute of Physics Conference Series No. 142, IOP Publishing, Bristol, pp. 689-692.
7. O. Kordina, J.P. Bergman, A. Henry, E. Janzen, S. Savage, J. Andre, L.P. Ramberg, U. Lindefelt, W. Hermansson, K. Bergaman, Appl. Phys. Lett. 67 (11) (1995) 1561.
8. P.G. Neudeck, D.J. Larkin, J.A. Powell, L.G. Matus, C.S. Salupo, Appl. Phys. Lett. 64 (11) (1994) 1386.
9. J.W. Palmour, J.A. Edmond, H.S. Kong, C.H. Carter, Jr, in: M.G. Spencer, R.P. Devaty, J.A. Edmond, M. Asif Khan, R. Kaplan, M. Rahman (Eds.), Institute of Physics Conference Series No. 137, IOP Publishing, Bristol, 1994, pp. 499-502.
10. M.M. Anikin, P.A. Ivanov, A.A. Lebedev, S.N. Pytko, A.M. Strel'chuk, A.L. Syrkin, in: Semicinductor Interfaces and Microstructures, World Scientific Publishing, Singapore, 1992, pp. 280-311.
11. M.M. Anikin, A.A. Lebedev, I.V. Popov, V.E. Sevastyanov, A.L. Syrkin, A.L. Suvorov, V.E. Chelnokov, G.P. Shpiniev, Pisma v ZhTF 10 (17) (1984) 1053.
12. J.W. Palmour, S.T. Allen, R. Singh, L.A. Lipkin, D.G. Waltz, in: S. Nakashima, H. Matsunami, S. Yoshida, H. Harima (Eds.), Silicon Carbide and Related Materials 1995, Institute of Physics Conference Series No. 142, IOP Publishing, Bristol, 1996,pp. 813-816.
13. J.W. Palmour, R. Singh, L.A. Lipkin, D.G. Waltz, in: Transactions of the Third International High Temperature Electronics Conference, Albuquerque, New Mexico, June 9-14, 1996, vol. 2, p. XVI-9.
14. V.F. Tsevtkov, S.T. Allen H.S. Kong, C.H. Carter, Jr, in: S. Nakashima, H. Matsunami, S. Yoshida, H. Harima (Eds.), Silicon Carbide and Related Materials 1995, Institute of Physics Conference Series No. 142, IOP Publishing, Bristol, 1996,pp. 17-22.
15. A.M. Strelchuk, A.L. Syrkin, V.E. Chelnokov, A.E. Cherenkov, V.A. Dmitriev, in: M.G. Spencer, R.P. Devaty, J.A. Edmond, M. Asif Khan, R. Kaplan, M. Rahman (Eds.), Institute of Physics Conference Series No. 137, IOP Publishing, Bristol, 1994, pp. 549-552.
16. A.M. Strel'chuk, Semiconductors 29 (1995) 614.
17. Y. Wang, W. Xie, J.A. Cooper, Jr, M.R. Melloch, J.W. Palmour, in: S. Nakashima, H. Matsunami, S. Yoshida, H. Harima (Eds.), Silicon Carbide and Related Materials 1995, Institute of Physics Conference Series No. 142, IOP Publishing, Bristol, 1996,pp. 809-812.
18. For review see V.A. Dmirriev, in: G.L. Harries (Ed.), Properties of Silicon Carbide, IEE, 1994, pp. 214-227; and V.A. Dmitriev, Physica B 185 (1993) 440.
19. For review see V.A. Dmirriev, in: G.L. Harries (Ed.), Properties of Silicon Carbide, IEE, 1994, pp. 214-227; and V.A. Dmitriev, Physica B 185 (1993) 440.
20. W. Munch, W. Kurzinger, Solid State Electronics 21 (1978) 1129.
21. S.N. Rendakova, to be published.
22. M.M. Anikin, A.S. Zubrilov, A.A. Lebedev, A.P. Strel'chuk, V.E. Chelnokov, Sov. Phys. Semicond. 25 (1991) 289.
23. R. Yakimova, M. Tuominen, A.S. Bakin, J.-O. Fornell, A. Vehanen, E, Jansen, in: S. Nakashima, H. Matsunami, S. Yoshida, H. Harima (Eds.), Silicon Carbide and Related Materials 1995, Institute of Physics Conference Series No. 142, IOP Publishing, Bristol, 1996, pp.101-104.