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Volumn 395, Issue 1, 1997, Pages 54-59

The effects of radiation on gallium arsenide radiation detectors

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHARGE CARRIERS; ELECTRONS; LEAKAGE CURRENTS; NEUTRON IRRADIATION; PROTONS; RADIATION EFFECTS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; THERMAL EFFECTS;

EID: 0031210050     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(97)00628-1     Document Type: Article
Times cited : (16)

References (9)
  • 4
    • 30244550851 scopus 로고
    • CERN-ECP/95-2
    • C. Furetta et al., CERN-ECP/95-2, 1995.
    • (1995)
    • Furetta, C.1
  • 5
    • 30244449193 scopus 로고    scopus 로고
    • MCP Wafer Technology Ltd., 34 Maryland Road, Milton Keynes, Bucks, MK15 8HJ UK
    • MCP Wafer Technology Ltd., 34 Maryland Road, Milton Keynes, Bucks, MK15 8HJ UK.
  • 7
    • 30244476721 scopus 로고
    • ATLAS Note INDET-NO-030, November
    • G. Gorfine, G.N. Taylor, ATLAS Note INDET-NO-030, November 1993.
    • (1993)
    • Gorfine, G.1    Taylor, G.N.2
  • 9
    • 30244500480 scopus 로고    scopus 로고
    • 4th Int. workshop on GaAs detectors and related compounds
    • these Proceedings Aberfoyle, Scotland, 1996
    • T. Sloan et al., these Proceedings (4th Int. Workshop on GaAs Detectors and Related Compounds, Aberfoyle, Scotland, 1996) Nucl. Instr. and Meth. A 395 (1997) 35.
    • (1997) Nucl. Instr. and Meth. A , vol.395 , pp. 35
    • Sloan, T.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.