Improved 3C-SiC Films Epitaxially Grown on Si by Flash Lamp Processing

Journal of the Electrochemical Society

Volumn 151, Issue 2, 2004, Pages

  Stoemenos, J ^a,b   Panknin, D ^a   Eickhoff, M ^c,d   Heera, V ^a   Skorupa, W ^a  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^b ARISTOTLE UNIVERSITY OF THESSALONIKI   (Greece)

^c DAIMLER AG   (Germany)

^d WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DEFECTS; EPITAXIAL GROWTH; INTERFACES (MATERIALS); IRRADIATION; MELTING; PHASE SEPARATION; SILICON; SILICON CARBIDE; SOLIDIFICATION; STRAIN; STRESS ANALYSIS;

FLASH LAMP PROCESSING (FLP); MELTING POINT;

THIN FILMS;

EID: 1342326271     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1639167     Document Type: Article

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