Flash lamp annealing of implantation doped p- and n-type 6H-SiC

Materials Science Forum

Volumn 353-356, Issue , 2001, Pages 587-590

  Panknin, D ^a   Gebel, T ^a,b   Skorupa, W ^a,b  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^b Nanoparc GmbH iG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ANNEALING; BORON; DOPING (ADDITIVES); ION IMPLANTATION; NITROGEN;

DOPANT; FLASH LAMP ANNEALING; FURNACE ANNEALING;

SILICON CARBIDE;

EID: 0035126748     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.4028/www.scientific.net/msf.353-356.587     Document Type: Article

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