A chemical reaction path design for the atomic layer deposition of tantalum nitride thin films

Electrochemical and Solid-State Letters

Volumn 9, Issue 9, 2006, Pages

  Kwon, Jung Dae ^a   Park, Jin Seong ^b   Lee, Han Choon ^c   Kang, Sang Won ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Samsung SDI   (South Korea)

^c Dongbu Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CHEMICAL REACTIONS; ELECTRIC CONDUCTIVITY; ELECTRODEPOSITION; REDUCTION; TANTALUM ALLOYS;

ATOMIC LAYER DEPOSITION; DEPOSITION CYCLE; HYDROGEN PLASMA; NITRIDATION;

THIN FILMS;

EID: 33746546306     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2216593     Document Type: Article

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