Characteristics of TiN thin films grown by ALD using TiCl4 and NH3

Metals and Materials International

Volumn 7, Issue 6, 2001, Pages 621-625

  Ahn, C H ^a   Cho, S G ^a   Lee, H J ^b   Park, K H ^b   Jeong, S H ^b  

^a Gyeongsang National University   (South Korea)

^b PKL   (South Korea)

Author keywords

Ammonia; Atomic layer deposition; Electrode; Titanium chloride; Titanium nitride

Indexed keywords

AMMONIA; ATOMIC LAYER DEPOSITION; DEPOSITION RATES; ELECTRODES; METALLIC FILMS; SILICON WAFERS; SURFACE REACTIONS; THIN FILMS; TITANIUM NITRIDE;

DEPOSITION TEMPERATURES; NITROGEN GAS; PREFERRED ORIENTATIONS; REACTION CHAMBERS; SATURATED SURFACES; TIN THIN FILMS; TITANIUM CHLORIDE; TITANIUM NITRIDE THIN FILMS;

CHLORINE COMPOUNDS;

EID: 0035665412     PISSN: 12259438     EISSN: None     Source Type: Journal    
DOI: 10.1007/bf03179261     Document Type: Article

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