Silicon orientation effects in the atomic layer deposition of hafnium oxide

Journal of the Electrochemical Society

Volumn 155, Issue 2, 2008, Pages

  Nyns, L ^a,b   Ragnarsson, L A ^a   Hall, L ^c   Delabie, A ^a,e   Heyns, M ^a   Van Elshocht, S ^a,e   Vinckier, C ^b   Zimmerman, P ^a,d   De Gendt, S ^a,b,e  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c STMicroelectronics USA   (United States)

^d SEMATECH   (United States)

^e ELECTROCHEMICAL SOCIETY

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; CRYSTALLOGRAPHY; DIELECTRIC MATERIALS; FIELD EFFECT TRANSISTORS; HAFNIUM COMPOUNDS; MOS DEVICES; PERMITTIVITY;

DIELECTRIC LAYERS; HAFNIUM OXIDE;

SILICON;

EID: 37549042434     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2806093     Document Type: Article

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