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Chemical Vapor Deposition

Volumn 7, Issue 5, 2001, Pages 211-217

Trimethylaluminum as a reducing agent in the atomic layer deposition of Ti(Al)N thin films

(4) Juppo, Marika a Alén, Petra a Ritala, Mikko a Leskelä, Markku a

a UNIVERSITY OF HELSINKI (Finland)

Author keywords

Atomic layer deposition; Diffusion barrier; Titanium nitrides; Trimethylaluminum

Indexed keywords

EID: 18044401491 PISSN: 09481907 EISSN: None Source Type: Journal
DOI: 10.1002/1521-3862(200109)7:5<211::AID-CVDE211>3.0.CO;2-L Document Type: Article

Times cited : (49)

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