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Volumn 210, Issue 3-4, 2003, Pages 231-239
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Properties including step coverage of TiN thin films prepared by atomic layer deposition
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Author keywords
AES; ALD; Aspect ratio; Resistivity; Step coverage; TiN
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Indexed keywords
ATOMIC FORCE MICROSCOPY;
AUGER ELECTRON SPECTROSCOPY;
CHEMICAL VAPOR DEPOSITION;
DEPOSITION;
PHYSICAL VAPOR DEPOSITION;
SCANNING ELECTRON MICROSCOPY;
SURFACE ROUGHNESS;
THIN FILMS;
TITANIUM NITRIDE;
X RAY DIFFRACTION ANALYSIS;
X RAY PHOTOELECTRON SPECTROSCOPY;
ATOMIC LAYER DEPOSITION (ALD);
SURFACE PROPERTIES;
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EID: 0037446482
PISSN: 01694332
EISSN: None
Source Type: Journal
DOI: 10.1016/S0169-4332(03)00158-2 Document Type: Article |
Times cited : (35)
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References (21)
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