Noise in Si/SiGe and Ge/SiGe MODFET

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5470, Issue , 2004, Pages 107-121

  Aniel, Frédéric ^a   Enciso Aguilar, Mauro ^a   Rodriguez, Manuel ^a   Zerounian, Nicolas ^a   Crozat, Paul ^a   Hackbarth, Thomas ^b   Herzog, Joest Hans ^b  

^a UNIVERSITÉ PARIS SACLAY   (France)

^b DAIMLER AG   (Germany)

Author keywords

High frequency noise; Low frequency noise; Noise modeling; Physical modeling; SiGe HFET

Indexed keywords

HIGH FREQUENCY NOISE; LOW FREQUENCY NOISE; NOISE MODELING; PHYSICAL MODELING; SIGE HFET;

COMPUTER SIMULATION; GAIN MEASUREMENT; HETEROJUNCTIONS; HYDRODYNAMICS; MATHEMATICAL MODELS; MICROELECTRONICS; MICROWAVE DEVICES; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SPURIOUS SIGNAL NOISE;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 4344680993     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.546770     Document Type: Conference Paper

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