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Volumn 84, Issue 4, 2004, Pages 610-612
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Reduced 1/f noise in p-Si0.3Ge0.7 metamorphic metal-oxide-semiconductor field-effect transistor
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Author keywords
[No Author keywords available]
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Indexed keywords
ELECTRIC CURRENTS;
HETEROJUNCTIONS;
MOLECULAR BEAM EPITAXY;
PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;
POISSON EQUATION;
SILICON COMPOUNDS;
SILICON WAFERS;
SPURIOUS SIGNAL NOISE;
THERMAL EFFECTS;
CARRIER NUMBER FLUCTUATIONS (CNF);
CORRELATED MOBILITY FLUCTUATIONS (CMF);
GENERATION-RECOMBINATION (GR) NOISE;
NORMALIZED POWER SPECTRAL DENSITY (NPSD);
MOSFET DEVICES;
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EID: 1242307305
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.1643532 Document Type: Article |
Times cited : (11)
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References (10)
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