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Volumn 84, Issue 4, 2004, Pages 610-612

Reduced 1/f noise in p-Si0.3Ge0.7 metamorphic metal-oxide-semiconductor field-effect transistor

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POISSON EQUATION; SILICON COMPOUNDS; SILICON WAFERS; SPURIOUS SIGNAL NOISE; THERMAL EFFECTS;

EID: 1242307305     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1643532     Document Type: Article
Times cited : (11)

References (10)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.