Device parameter optimization of strained Si channel SiGe/Si n-MODFET's using a one-dimensional charge control model

IEEE Transactions on Electron Devices

Volumn 45, Issue 12, 1998, Pages 2430-2436

  Halkias, George ^a   Vegiri, Aliki ^a  

^a INSTITUTE OF MICROELECTRONICS   (Greece)

Author keywords

Modeling; MODFET; Sige; Simulation

Indexed keywords

HETEROJUNCTIONS; OPTIMIZATION; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS;

CHARGE CONTROL MODEL; MODFET DEVICES;

FIELD EFFECT TRANSISTORS;

EID: 0032314806     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.735719     Document Type: Article

References (15)

1. K. Ismail, S. Rishton, J. O. Chu, K. Chan, and B. S. Meyerson, High performance Si/SiGe ra-type modulation doped transistors, IEEE Electron Device Lett., vol. 14, pp. 348-350, 1993.
2. K. Ismail, J. O. Chu, and M. Arafa, Integrated enhancement-and depletion-mode FET's in modulation-doped Si/SiGe heterostructures, IEEE Electron Device Lett., vol. 18, pp. 435-437, 1997.
3. S. Verdonct-Vandebroek, E. F. Grabbe, B. S. Meyerson, D. L. Harame, P. J. Restle, J. M. C. Stork, and J. B. Johnson, SiGe-channel heterojunction p-MOSFET's, IEEE Trans. Electron Devices, vol. 41, pp. 90-101, 1994.
4. A. F. M. Anwar, K.-W. Eiu, and R. D. Carroll, An envelope function description of the quantum well formed in strained SiGe/Si modulation doped field effect transistors, J. Appl. Phys., vol. 74, no. 3, pp. 2064-2066, Aug. 1, 1993.
5. A. F. M. Anwar, K.-W. Eiu, and V. P. Kesan, Noise performance of Si/Sii-xGex FET's, IEEE Trans. Electron Devices, vol. 42, pp. 1841-1846, 1995.
6. A. Sadek, K. Ismail, M. A. Armstrong, D. A. Antoniadis, and F. Stern, Design of Si/SiGe heterojunction complementary metal-oxide-semiconductor transistors, IEEE Trans. Electron Devices, vol. 43, pp. 1224-1232, 1996.
7. A. G. O'Neill and D. A. Antoniadis, Deep submicron CMOS based on SiGe technology, IEEE Trans. Electron Devices, vol. 43, pp. 911-918, 1996.
8. _, Investigation of Si/SiGe-based FET geometries for high frequency performance by computer simulation, IEEE Trans. Electron Devices, vol. 44, pp. 80-88, 1997.
9. G. Halkias, A. Vegiri, G. Pananakakis, and A. Christou, Efficient charge control model for pseudomorphic and strained high electron mobility transistors on GaAs and InP substrates, Solid-State Electron., vol. 35, no. 4, pp. 459-465, 1992.
10. E. Guan, A. Christou, G. Halkias, and D. F. Barbe, Modeling of currentvoltage characteristics for strained HEMT's by the variational charge control model, IEEE Trans. Electron Devices, vol. 42, pp. 612-615, 1995.
11. F. Stern, Iteration methods for calculating self-consistent fields in semiconductor inversion layers, J. Comput. Phys., no. 6, pp. 56-67, 1970.
12. S. T. H. Abidi and S. N. Mohammad, Approximation for the fermi-dirac integral with applications to degenerately doped solar cells and other semiconductor devices, J. Appl. Phys., vol. 56, no. 11, pp. 3341-3343, 1984.
13. W. H. Press, B. P. Flannery, S.A. Teukolsky, and W. T. Vetterling, Numerical Recipes. Cambridge, U.K.: Cambridge Univ. Press, 1982, pp. 274-325.
14. M. M. Rieger and P. Vogl, Electronic band parameters in strained Sii-xGex alloys on Sii_yGey substrates, Phys. Rev. B, vol. 48, pp. 14276-14287, 1993.
15. M. C. Foisy, P. J. Tasker, B. Hughes, and L. F. Eastman, The rôle of inefficient charge modulation in limiting the current-gain cutoff frequency of the MODFET, IEEE Trans. Electron Devices, vol. 35, pp. 871-878, 1988.