50Ω noise measurements with full receiver calibration without tuner

Electronics Letters

Volumn 32, Issue 3, 1996, Pages 261-262

  Crozat, P ^a   Boutez, C ^b   Chaubet, M ^c   Danelon, V ^a   Sylvestre, A ^a   Vernet, G ^a  

^a CNRS   (France)

^b OBSERVATOIRE DE PARIS   (France)

^c CNES   (France)

Author keywords

Semiconductor device noise; Semiconductor devices; Transistors

Indexed keywords

CALCULATIONS; CALIBRATION; CRYOGENICS; HIGH ELECTRON MOBILITY TRANSISTORS; NATURAL FREQUENCIES; PARAMETER ESTIMATION; SEMICONDUCTOR DEVICES; SIGNAL RECEIVERS; SPECTRUM ANALYSIS;

BROADBAND CAPACITIES; NOISE PARAMETERS; OFFSET SHORT;

SPURIOUS SIGNAL NOISE;

EID: 0030085569     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19960146     Document Type: Article

References (4)

1. DAMBRINE, G., HAPPY, H., DANNEVILLE, F., and CAPPY. A.: 'A new method for on wafer noise measurement', IEEE Trans., 1993, MTT-41, (3), pp. 375-381
2. TASKER, P.J., REINERT, W., HUGHES, B., BRAUNSTEIN, J., and SCHLECHTWEG, M.: 'Transistor noise parameter extraction using a 50Ω measurement system'. IEEE MTT-S Int. Microw. Symp. Digest, 1993, pp. 1251-1254
3. CROZAT, P., BOUCHON, D., HENAUX, J.C., ADDE, R., and VERNET, G.: 'Cryogenic on-wafer microwave network analyzer high precision measurements (0.1-40GHz) of microelectronic devices'. Proc. Low Temp. Electron. and High Temp. Superconductivity, (Ed. Electrochem. Soc.), 1993, 93-22, pp. 283-293
4. MEIERER, R., and TSIRONIS, C.: 'An on-wafer noise parameter measurement technique with automatic receiver calibration', Microw. J., 1995, pp. 22-37