Noise analysis of 0.1 μm gate MESFETs and HEMTs

Solid-State Electronics

Volumn 42, Issue 1, 1998, Pages 79-85

  Mateos, Javier ^a   González, Tomás ^a   Pardo, Daniel ^a   Tadyszak, Patrick ^b   Danneville, François ^b   Cappy, Alain ^b  

^a UNIVERSITY OF SALAMANCA   (Spain)

^b CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC CURRENTS; HIGH ELECTRON MOBILITY TRANSISTORS; MESFET DEVICES; MONTE CARLO METHODS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SPURIOUS SIGNAL NOISE; TRANSCONDUCTANCE;

NOISE ANALYSIS;

GATES (TRANSISTOR);

EID: 0031633687     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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