Noise characterization of InP based heterojunction bipolar transistor at microwave frequencies

European Solid-State Device Research Conference

Volumn , Issue , 1998, Pages 408-411

  Danelon, V ^a   Aniel, F ^a   Riet, M ^b,c   Crozat, P ^a   Vernet, G ^a   Adde, R ^a  

^a UNIVERSITÉ PARIS SACLAY   (France)

^b OPTO+   (France)

^c ORANGE LABS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

HETEROJUNCTIONS;

BASE-COLLECTORS; GAAS; HIGH-FREQUENCY NOISE; INP; NOISE CHARACTERIZATION; SELF-ALIGNED;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 84908220637     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. K. Chen, D. A. Humphrey, L. Fan, R. A. Hamm, D. Sivco, A. Y. cho, and A. Tate, "Noise Characteristics of lnP-Based Heterostructure Bipolar Transistor", Current Trends in Heterojunction Bipolar Transistors, M. F. Chang, pp. 351-366, 1996.
2. P. Crozat, C. Boutez, M. Chaubet, V. Danelon, A. Sylvestre and G. Vernet, "son noise measurements with full receiver calibration without tuner", Electron. Lett., 1996, Vol. 32, n03, pp. 261-262.
3. J. P. Roux, L. Escotte, R. Plana, and J. Graffeuil, "SmallSignal and Noise Model Extraction Technique for Heterojunction Bipolar Transistor at Microwave Frequencies", IEEE TRANS. ON MIT, Feb. 1995, Vol. 43, n02, pp. 293-297.
4. R. J. Hawkins, "Limitations of Nielsen's and Related Noise Equations Applied to Microwave Bipolar Transistors, and a New Expression for the Frequency and Current Dependent Noise Figure", Solid-State Electronics, 1977, Vol. 20, pp. 191- 196.