Technology independent degradation of minimum noise figure due to pad parasitics

IEEE MTT-S International Microwave Symposium Digest

Volumn 1, Issue , 1998, Pages 145-148

  Biber, Charlotte E ^a   Schmatz, Martin L ^a   Morf, Thomas ^a   Lott, Urs ^a   Morifuji, Eiji ^a   Bachtold, Werner ^a  

^a ETH ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFIERS (ELECTRONIC); CMOS INTEGRATED CIRCUITS; CORRELATION METHODS; ELECTRIC LOSSES; HIGH ELECTRON MOBILITY TRANSISTORS; MATRIX ALGEBRA; MESFET DEVICES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SPURIOUS SIGNAL NOISE; SUBSTRATES;

PAD PARASITICS;

SEMICONDUCTOR DEVICE MODELS;

EID: 0031628485     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)