High-Frequency Noise Measurements on FET's with Small Dimensions

IEEE Transactions on Electron Devices

Volumn 33, Issue 11, 1986, Pages 1801-1805

  Abidi, A A ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFIERS, BROADBAND - APPLICATIONS; INTEGRATED CIRCUIT TESTING - MEASUREMENTS; NOISE, SPURIOUS SIGNAL - MEASUREMENTS;

BROADBAND NOISE; HF NOISE MEASUREMENT; SUBMICROMETER MOSFET;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0022811203     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1986.22743     Document Type: Article

References (6)

1. M. P. Lepselter et al., “A systems approach to 1-µm NMOS,” Proc. IEEE, vol. 71, p. 640, May 1983.
2. S. M. Sze, Semiconductor Devices: Physics and Technology. New York: Wiley, 1985.
3. A. A. Abidi “Gigahertz transresistance amplifiers in fine line NMOS,” IEEE J. Solid-State Circuits, vol. SC-19, pp. 986–994, Dec. 1984.
4. R. P. Jindal, “High-frequency noise in fine line NMOS FET's,” in IEDM Tech. Dig., pp. 68–71, 1985.
5. P. R. Gray and R. G. Meyer, Analysis and Design of Analog Integrated Circuits. New York: Wiley, 1984.
6. A. van der Ziel, Noise: Sources, Characterization, and Measurement. Englewood Cliffs, NJ: Prentice-Hall, 1970.