DC and high frequency performance of 0.1 μm n-type Si/Si0.6Ge0.4 MODFET with fMAX = 188 GHZ at 300K and fMAX = 230 GHZ at 50k

Electronics Letters

Volumn 39, Issue 1, 2003, Pages 149-151

  Enciso Aguilar, M ^a   Aniel, F ^a   Crozat, P ^a   Adde, R ^a   Herzog, H J ^b   Hackbarth, T ^b   Konig U ^b   Von Kanel H ^c  

^a UNIVERSITÉ PARIS SACLAY   (France)

^b DAIMLER AG   (Germany)

^c ETH ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION; DOPING (ADDITIVES); EQUIVALENT CIRCUITS; MOLECULAR BEAM EPITAXY; PHONONS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

MODULATION DOPED FIELD EFFECT TRANSISTORS (MODFET);

FIELD EFFECT TRANSISTORS;

EID: 0037426969     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20031182     Document Type: Article

References (6)

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3. SIMOEN, E., and CLAEYS, C.: 'Impact of CMOS processing steps on the drain current kink of NMOSFETs at liquid helium temperature', IEEE Trans. Electron Devices, 2001, 48, pp. 1207-1215
4. ANIEL, F., SYLVESTRE, A., JIN, Y., CROZAT, P., and ADDE, R.: 'Enhancements and degradations in ultrashort gate GaAs and InP HEMTs properties at cryogenic temperatures: an overview', J. Phys. IV, 1996, 6, (C3), pp. 145-149
5. 0.4 n-MODFET'. Int. Semiconductor Device Research Symp., Washington DC, USA, 2001, pp. 482-485
6. ANIEL, F., ZEROUNIAN, N., ADDE, R., ZEUNER, M., HACKBARTH, T., and KONIG, U.: 'Low temperature analysis of 0.25 μm SiGe n-MODFET', IEEE Trans. Electron Devices, 2000, 47, pp. 1447-1483