High-performance SiGe pMODFETs grown by UHV-CVD

Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO

Volumn , Issue , 1999, Pages 27-32

  Koester, S J ^a   Hammond, R ^a   Chu, J O ^a   Ott, J A ^a   Mooney, P M ^a   Perraud, L ^a   Jenkins, K A ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRIC CURRENTS; NATURAL FREQUENCIES; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; SILICON ON SAPPHIRE TECHNOLOGY; SPURIOUS SIGNAL NOISE; SUBSTRATES; TRANSCONDUCTANCE;

FREQUENCY OSCILLATION; GERMANIUM CHANNELS; GERMANIUM QUANTUM WELLS; UNITY CURRENT GAIN CUTOFF EFFICIENCY;

FIELD EFFECT TRANSISTORS;

EID: 0033307718     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)