Noise Parameters of InP-Based Double Heterojunction Base-Collector Self-Aligned Bipolar Transistors

IEEE Microwave and Guided Wave Letters

Volumn 9, Issue 5, 1999, Pages 195-197

  Crozat, P ^b   Adde, R ^b   Benchimol, J L ^b   Mba, J ^b   Riet, M ^b   Vernet, G ^b  

^a UNIVERSITÉ PARIS SACLAY   (France)

^b OPTO+   (France)

Author keywords

[No Author keywords available]

Indexed keywords

HETEROJUNCTION BIPOLAR TRANSISTORS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SPURIOUS SIGNAL NOISE;

CUTOFF FREQUENCY; DOUBLE HETEROJUNCTION BASE-COLLECTOR SELF ALIGNED BIPOLAR TRANSISTORS;

MICROWAVES;

EID: 0032627614     PISSN: 10518207     EISSN: None     Source Type: Journal    
DOI: 10.1109/75.766762     Document Type: Article

References (7)

1. Y. K. Chen, D. A. Humphrey, L. Fan, R. A. Hamm, D. Sivco, A. Y. Cho, and A. Tate, “Noise characteristics of InP-based heterostructure bipolar transistor,” in Current Trends in Heterojunction Bipolar Transistors. Thousand Oaks, CA: M. F. Chang, 1996, pp. 351-366
2. V. Danelon, F. Aniel, M. Riet, P. Crozat, G. Vernet, and R. Adde, “Noise characterization ofInP based heterojunction bipolar transistor at microwave frequencies,” in Proc. ESSDERC'98, Bordeaux, France, 1998
3. V. Danelon, P. Crozat, F. Aniel, and G. Vernet, “A 4 noise parameters determination method for transistors based on the frequency dependence of the noise figure,” Electron. Lett., vol.34, pp. 1612-1613, 1998
4. J. Mba, J. L. Benchimol, A. M. Duchenois, M. Riet, J. Godin, and A. Scavennec, “Beneficial contribution of compositionally InxGa1xAs graded base InP double heterojunction bipolar transistor (DHBT's) for very high speed transmission circuits,” in Proc. ESSDERC'98, Bordeaux, France, 1998
5. H. Schumacher, U. Erben, and A. Graffeuil, “Low-noise performance of SiGe heterojunction bipolar transistor,” in IEEE MTT-S Dig., 1994, pp. 1167-1170
6. J. P. Roux, L. Escotte, R. Plana, J. Graffeuil, L. Delage, and H. Blanck, “Small-signal and noise model extraction technique for heterojunction bipolar transistor at microwave frequencies,” IEEE Trans. Microwave Theory Tech., vol. 43, pp. 293-297, 1995
7. R. J. Hawkins, “Limitations of Nielsen's and related noise equations applied to microwave bipolar transistors, and a new expression for the frequency and current dependent noise figure,” Solid-State Electron., vol. 20, pp. 191-196, 1977