Effect of temperature and inhomogeneity on the yield of PtSi-n-Si photodetectors

Journal of Crystal Growth

Volumn 288, Issue 1, 2006, Pages 166-170

  Sellai, A ^a   Dawson, P ^b  

^a SULTAN QABOOS UNIVERSITY   (Oman)

^b QUEEN'S UNIVERSITY BELFAST   (United Kingdom)

Author keywords

A1. Interfaces; A3. Schottky barriers; B3. Photodetectors

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; PLATINUM COMPOUNDS; THERMAL EFFECTS; THERMIONIC EMISSION;

CUT-OFF EDGE; INTERFACES; SCHOTTKY BARRIERS; STANDARD DEVIATION;

PHOTODETECTORS;

EID: 31644432050     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.12.029     Document Type: Conference Paper

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