Leakage current in Ti/4H-SiC Schottky barrier diode

Physica B: Condensed Matter

Volumn 376-377, Issue 1, 2006, Pages 370-373

  Ohtsuka, K ^a   Matsuno, Y ^a   Kuroda, K ^a   Sugimoto, H ^a   Tarui, Y ^a   Imaizumi, M ^a   Takami, T ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

Bunching steps; Interface pinning; SiC power device; The Schottky barrier

Indexed keywords

ELECTRIC FIELDS; INTERFACES (MATERIALS); LEAKAGE CURRENTS; METAL ANALYSIS; SEMICONDUCTOR DEVICES;

BUNCHING STEPS; INTERFACE PINNING; SIC POWER DEVICE; THE SCHOTTKY BARRIER;

SCHOTTKY BARRIER DIODES;

EID: 33645213200     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2005.12.096     Document Type: Conference Paper

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