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Volumn 275, Issue 1-2, 2005, Pages

Modeling of SiC-CVD on Si-face/C-face in a horizontal hot-wall reactor

(5) Nishizawa, Shin Ichi a Kojima, Kazutoshi a Kuroda, Satoshi a Arai, Kazuo a Pons, Michel b

a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST (Japan)

Author keywords

A1. Doping; A1. Etching; A1. Growth models; A1. Surface structure; A3. Chemical vapor deposition processes; B2. Semiconducting silicon compounds

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; ELECTRIC BREAKDOWN; ENERGY GAP; ETCHING; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SILICON CARBIDE;

BAND GAPS; CHANNEL MOBILITY; GROWTH MODULES; HOT-WALL REACTORS;

CHEMICAL REACTORS;

EID: 15944422125 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2004.11.072 Document Type: Conference Paper

Times cited : (15)

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