The effect of Schottky metal thickness on barrier height inhomogeneity in identically prepared Au/n-GaAs Schottky diodes

Semiconductor Science and Technology

Volumn 21, Issue 1, 2006, Pages 1-5

  Biber, M ^a   Gullu O ^a   Forment, S ^b   Van Meirhaeghe, R L ^b   Turut A ^a  

^a ATATÜRK UNIVERSITY   (Turkey)

^b GHENT UNIVERSITY   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ETCHING; EVAPORATION; SEMICONDUCTING GALLIUM ARSENIDE; SINGLE CRYSTALS; VACUUM;

BARRIER HEIGHT; CHEMICAL ETCHING; CONVENTIONAL VACUUM SYSTEM; SCHOTTKY METAL THICKNESS;

SCHOTTKY BARRIER DIODES;

EID: 29244481521     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/21/1/001     Document Type: Article

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