Characterization of charge generated in silicon carbide n+p diodes using transient ion beam-induced current

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 541, Issue 1-2, 2005, Pages 236-240

  Ohshima, T ^a   Satoh, T ^a   Oikawa, M ^a   Yamakawa, T ^b   Onoda, S ^b   Wakasa, T ^b   Laird, J S ^a   Hirao, T ^a   Kamiya, T ^a   Itoh, H ^a   Kinoshita, A ^c   Tanaka, R ^c   Nakano, I ^c   Iwami, M ^c   Fukushima, Y ^d  

^a JAPAN ATOMIC ENERGY AGENCY   (Japan)

^b TOKAI UNIVERSITY   (Japan)

^c OKAYAMA UNIVERSITY   (Japan)

^d INSTITUTE OF PARTICLE AND NUCLEAR STUDIES   (Japan)

Author keywords

Charge collection; Gamma ray irradiation; Pn diode; Silicon carbide; Transient ion beam induced current

Indexed keywords

ELECTRIC CHARGE; ELECTRIC CURRENTS; GAMMA RAYS; ION BEAMS; OXYGEN; SEMICONDUCTOR DIODES;

CHARGE COLLECTION; GAMMA-RAY IRRADIATION; PN DIODES; TRANSIENT ION BEAM-INDUCED CURRENT;

SILICON CARBIDE;

EID: 20144383379     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2005.01.062     Document Type: Conference Paper

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