-
1
-
-
0003251891
-
Semiconductors for room temperature nuclear detector applications
-
New York: Academic.
-
R. B. James and T. E. Schlesinger, “Semiconductors for room temperature nuclear detector applications,” in Semiconductors and Semimetals. New York: Academic, 1995, vol. 43.
-
(1995)
in Semiconductors and Semimetals
, vol.43
-
-
James, R.B.1
Schlesinger, T.E.2
-
2
-
-
0029358787
-
The multi-element mercuric iodide detector array with computer controlled miniaturized electronics for EXAFS
-
B. E. Patt, J. S. Iwanczyk, R. Szczebiot, G. Maculewicz, M.Wang, Y. J. Wang, B. Hedman, K. O. Hodgson, and A. D. Cox, “The multi-element mercuric iodide detector array with computer controlled miniaturized electronics for EXAFS,” IEEE Trans. Nucl. Sci., vol. 42, pp. 558-564, 1995.
-
(1995)
IEEE Trans. Nucl. Sci.
, vol.42
, pp. 558-564
-
-
Patt, B.E.1
Iwanczyk, J.S.2
Szczebiot, R.3
Maculewicz, G.4
Wang, M.5
Wang, Y.J.6
Hedman, B.7
Hodgson, K.O.8
Cox, A.D.9
-
3
-
-
0032114882
-
Coplanar grid patterns and their effect on energy resolution of CdZnTe detectors
-
Z. He, G. F. Knoll, D. K.Wehe, and Y. F. Du, “Coplanar grid patterns and their effect on energy resolution of CdZnTe detectors,” Nucl. Instrum. Methods, vol. A411, pp. 107-113, 1998.
-
(1998)
Nucl. Instrum. Methods
, vol.A411
, pp. 107-113
-
-
He, Z.1
Knoll, G.F.2
Wehe, D.K.3
Du, Y.F.4
-
4
-
-
0031078827
-
Pixel X-ray detectors in epitaxial gallium arsenide with high-energy resolution capabilities (Fano factor experimental determination)
-
Nov.
-
G. Bertuccio, A. Pullia, J. Lauter, A. Foerster, and H. Luth, “Pixel X-ray detectors in epitaxial gallium arsenide with high-energy resolution capabilities (Fano factor experimental determination),” IEEE Trans. Nucl. Sci., vol. 44, pp. 1-5, Nov. 1997.
-
(1997)
IEEE Trans. Nucl. Sci.
, vol.44
, pp. 1-5
-
-
Bertuccio, G.1
Pullia, A.2
Lauter, J.3
Foerster, A.4
Luth, H.5
-
5
-
-
0033321757
-
Development of high-resolution CdTe radiation detectors in a new M-pi-n design
-
Aug.
-
M. Niraula, D. Mochizuki, T. Aoki, Y. Tomita, T. Nihashi, and Y. Hatanaka, “Development of high-resolution CdTe radiation detectors in a new M-pi-n design,” IEEE Trans. Nucl. Sci., vol. 46, pp. 1237-1241, Aug. 1999.
-
(1999)
IEEE Trans. Nucl. Sci.
, vol.46
, pp. 1237-1241
-
-
Niraula, M.1
Mochizuki, D.2
Aoki, T.3
Tomita, Y.4
Nihashi, T.5
Hatanaka, Y.6
-
6
-
-
0035890351
-
High resolution x-ray spectroscopy using GaAs arrays
-
pt. 10.
-
A. Owens, M. Bavdaz, A. Peacock, A. Poelaert, H. Andersson, S. Nenonen, H. Sipila, L. Troger, and G. Bertuccio, “High resolution x-ray spectroscopy using GaAs arrays,” J. Appl. Phys., pt. 10, vol. 90, pp. 5376-5381, 2001.
-
(2001)
J. Appl. Phys.
, vol.90
, pp. 5376-5381
-
-
Owens, A.1
Bavdaz, M.2
Peacock, A.3
Poelaert, A.4
Andersson, H.5
Nenonen, S.6
Sipila, H.7
Troger, L.8
Bertuccio, G.9
-
8
-
-
85008064834
-
-
Mar. number dedicated to silicon carbide.
-
IEEE Trans. Electron Devices, vol. 46, Mar. 1999. number dedicated to silicon carbide.
-
(1999)
IEEE Trans. Electron Devices
, vol.46
-
-
-
9
-
-
0002691592
-
SiC neutron detectors for high temperature operation
-
Harwell, U.K., Dec.
-
R. V. Babcock and H. C. Chang, “SiC neutron detectors for high temperature operation,” in Proc. Symp. Neutron Dectectors, Dosimetry, and Standardization Int. Atomic Energy Agency (IAEA), vol. 1, Harwell, U.K., Dec. 1962, pp. 613-622.
-
(1962)
in Proc. Symp. Neutron Dectectors, Dosimetry, and Standardization Int. Atomic Energy Agency (IAEA)
, vol.1
, pp. 613-622
-
-
Babcock, R.V.1
Chang, H.C.2
-
10
-
-
0015432196
-
Properties of ionizing-radiation counters made by silicon carbide doped by diffusion of berillium
-
Nov.
-
V. A. Tikhomirova, O. P. Fedoseeva, and G. F. Kholuyanov, “Properties of ionizing-radiation counters made by silicon carbide doped by diffusion of berillium,” Soviet Phys.-Semiconductors, vol. 6, no. 5, pp. 831-832, Nov. 1972.
-
(1972)
Soviet Phys.-Semiconductors
, vol.6
, Issue.5
, pp. 831-832
-
-
Tikhomirova, V.A.1
Fedoseeva, O.P.2
Kholuyanov, G.F.3
-
11
-
-
0033339794
-
Simultaneous measurement of neutron and gamma-ray radiation levels from a TRIGA reactor core using silicon carbide semiconductor detectors
-
June.
-
A. R. Dulloo, F. H. Ruddy, J. G. Seidel, C. Davison, T. Flinchbaugh, and T. Daubenspeck, “Simultaneous measurement of neutron and gamma-ray radiation levels from a TRIGA reactor core using silicon carbide semiconductor detectors,” IEEE Trans. Nucl. Sci., vol. 46, pp. 275-279, June 1999.
-
(1999)
IEEE Trans. Nucl. Sci.
, vol.46
, pp. 275-279
-
-
Dulloo, A.R.1
Ruddy, F.H.2
Seidel, J.G.3
Davison, C.4
Flinchbaugh, T.5
Daubenspeck, T.6
-
12
-
-
0343374874
-
Epitaxial silicon carbide charge particle detectors
-
F. Nava, P. Vanni, C. Lanzieri, and C. Canali, “Epitaxial silicon carbide charge particle detectors,” Nucl. Instrum. Methods, vol. A437, pp. 354-358, 1999.
-
(1999)
Nucl. Instrum. Methods
, vol.A437
, pp. 354-358
-
-
Nava, F.1
Vanni, P.2
Lanzieri, C.3
Canali, C.4
-
13
-
-
0035307987
-
X-ray detection with epitaxial silicon carbide
-
Apr.
-
G. Bertuccio, R. Casiraghi, and F. Nava, “X-ray detection with epitaxial silicon carbide,” IEEE Trans. Nucl. Sci., vol. 48, pp. 232-233, Apr. 2001.
-
(2001)
IEEE Trans. Nucl. Sci.
, vol.48
, pp. 232-233
-
-
Bertuccio, G.1
Casiraghi, R.2
Nava, F.3
-
15
-
-
85008012520
-
-
[Online]. Available: http://www.esrf.fr/computing/scientific/xop/
-
XOP (X-Ray Oriented Program) Program Software [Online]. Available: http://www.esrf.fr/computing/scientific/xop/
-
XOP (X-Ray Oriented Program) Program Software
-
-
-
16
-
-
0012322248
-
Energy of ionization by electrons in germanium and silicon carbide crystals
-
June.
-
G. P. Golubev, V. S. Vavilov, and V. D. Egorov, “Energy of ionization by electrons in germanium and silicon carbide crystals,” Sov. Phys. Solid State, vol. 7, no. 12, pp. 3000-3001, June 1966.
-
(1966)
Sov. Phys. Solid State
, vol.7
, Issue.12
, pp. 3000-3001
-
-
Golubev, G.P.1
Vavilov, V.S.2
Egorov, V.D.3
-
17
-
-
0000513282
-
Scattering by ionization and phonon emission in semiconductors
-
Dec.
-
R. C. Alig, S. Bloom, and C. W. Struck, “Scattering by ionization and phonon emission in semiconductors,” Physical Rev. B, vol. 22, no. 22, pp. 5565-5582, Dec. 1980.
-
(1980)
Physical Rev. B
, vol.22
, Issue.22
, pp. 5565-5582
-
-
Alig, R.C.1
Bloom, S.2
Struck, C.W.3
-
18
-
-
0033237028
-
Particle detectors based on semi-insulating silicon carbide
-
M. Rogalla, K. Runge, and A. Soldner-Rembold, “Particle detectors based on semi-insulating silicon carbide,” Nucl. Phys. B (Proc. Suppl.), vol. 78, p. 516, 1999.
-
(1999)
Nucl. Phys. B (Proc. Suppl.)
, vol.78
, pp. 516
-
-
Rogalla, M.1
Runge, K.2
Soldner-Rembold, A.3
-
19
-
-
0002734439
-
Accurate determination of ionization energy in semiconductor detectors
-
R. H. Pehl, F. S. Goulding, D. A. Landis, and M. Lenzlinger, “Accurate determination of ionization energy in semiconductor detectors,” Nucl. Instrum. Methods, vol. 59, pp. 45-55, 1968.
-
(1968)
Nucl. Instrum. Methods
, vol.59
, pp. 45-55
-
-
Pehl, R.H.1
Goulding, F.S.2
Landis, D.A.3
Lenzlinger, M.4
-
20
-
-
4243063915
-
Field effect transistors for charge amplifiers
-
V. Radeka, “Field effect transistors for charge amplifiers,” IEEE Trans. Nucl. Sci., vol. NS-20, pp. 182-189, 1973.
-
(1973)
IEEE Trans. Nucl. Sci.
, vol.NS-20
, pp. 182-189
-
-
Radeka, V.1
-
21
-
-
0031632040
-
Fano factor determination for CZT
-
Dec.
-
R. H. Redus, J. A. Pantazis, A. C. Huber, V. T. Jordanov, J. Butler, and B. Apotovsky et al., “Fano factor determination for CZT,” Proc. Semiconductors for Room-Temperature Radiation Detector Applications II, ser. Mat. Res. Soc. Symp. Proc. Ser., vol. 487, Dec. 1997.
-
(1997)
Proc. Semiconductors for Room-Temperature Radiation Detector Applications II, ser. Mat. Res. Soc. Symp. Proc. Ser.
, vol.487
-
-
Redus, R.H.1
Pantazis, J.A.2
Huber, A.C.3
Jordanov, V.T.4
Butler, J.5
Apotovsky, B.6
-
22
-
-
17144451157
-
Temperature dependence of forward and reverse current characteristics of Ti, W, Ta, and Ni schottky diodes on 4H-SiC
-
Kloster Blaz, Germany, Sept. “Material Science Forum,” Trans. Tech. Publ., 2001.
-
M. Treu, R. Rupp, H. Kapels, and W. Bartsch, “Temperature dependence of forward and reverse current characteristics of Ti, W, Ta, and Ni schottky diodes on 4H-SiC,” in Proc. 3rd Eur. Conf. Silicon Carbide and Related Materials, Kloster Blaz, Germany, Sept. 2000, pp. 679-682. “Material Science Forum,” vol. 353-356 Trans. Tech. Publ., 2001.
-
(2000)
in Proc. 3rd Eur. Conf. Silicon Carbide and Related Materials
, vol.353-356
, pp. 679-682
-
-
Treu, M.1
Rupp, R.2
Kapels, H.3
Bartsch, W.4
-
23
-
-
0030166311
-
High-resolution p-i-n CdTe and CdZnTe X-ray detectors with cooling and rise-time discrimination
-
June.
-
A. Niemela, H. Sipila, and V. I. Ivanov, “High-resolution p-i-n CdTe and CdZnTe X-ray detectors with cooling and rise-time discrimination,” IEEE Trans. Nucl. Sci., vol. 43, pp. 1476-1480, June 1996.
-
(1996)
IEEE Trans. Nucl. Sci.
, vol.43
, pp. 1476-1480
-
-
Niemela, A.1
Sipila, H.2
Ivanov, V.I.3
-
25
-
-
48549113488
-
Semiconductor drift chamber-An application of a novel charge transport scheme
-
E. Gatti and P. Rehak, “Semiconductor drift chamber-An application of a novel charge transport scheme,” Nucl. Instrum. Methods, vol. A225, pp. 608-614, 1984.
-
(1984)
Nucl. Instrum. Methods
, vol.A225
, pp. 608-614
-
-
Gatti, E.1
Rehak, P.2
-
26
-
-
0030264652
-
Resolution limits of silicon detectors and electronics for soft X-ray spectroscopy at non cryogenic temperatures
-
A. Pullia and G. Bertuccio, “Resolution limits of silicon detectors and electronics for soft X-ray spectroscopy at non cryogenic temperatures,” Nucl. Instrum. Methods Phys. Res., vol. A380, pp. 1-5, 1996.
-
(1996)
Nucl. Instrum. Methods Phys. Res.
, vol.A380
, pp. 1-5
-
-
Pullia, A.1
Bertuccio, G.2
-
27
-
-
0027553220
-
A novel charge sensitive preamplifier without the feedback resistor
-
G. Bertuccio, P. Rehak, and D. Xi, “A novel charge sensitive preamplifier without the feedback resistor,” Nucl. Instrum. Methods Phys. Res., vol. A326, pp. 71-76, 1993.
-
(1993)
Nucl. Instrum. Methods Phys. Res.
, vol.A326
, pp. 71-76
-
-
Bertuccio, G.1
Rehak, P.2
Xi, D.3
-
28
-
-
33645405191
-
A method for the determination of the noise parameters in preamplifying systems for semiconductor radiation detectors
-
G. Bertuccio and A. Pullia, “A method for the determination of the noise parameters in preamplifying systems for semiconductor radiation detectors,” Rew. Sci. Instrum., vol. 64, pp. 3294-3298, Nov. 1993.
-
(1993)
Rew. Sci. Instrum.
, vol.64
, pp. 3294-3298
-
-
Bertuccio, G.1
Pullia, A.2
-
30
-
-
0028497897
-
A high resolution silicon drift chamber for X-ray spectroscopy
-
C. Gauthier, J. Goulon, E. Moguiline, P. Elleaume, S. Feite, Z. Gaburro, A. Longoni, E. Gatti, P. Dressler,M. O. Lampert, and R. Henck, “A high resolution silicon drift chamber for X-ray spectroscopy,” Nucl. Instrum. Methods, vol. A349, p. 258, 1994.
-
(1994)
Nucl. Instrum. Methods
, vol.A349
, pp. 258
-
-
Gauthier, C.1
Goulon, J.2
Moguiline, E.3
Elleaume, P.4
Feite, S.5
Gaburro, Z.6
Longoni, A.7
Gatti, E.8
Dressler, P.9
Lampert, M.O.10
Henck, R.11
-
32
-
-
84874038517
-
-
4600 Silicon Dr., Durham, NC 27703.
-
S. M. Sze, CREE Research, Inc., 4600 Silicon Dr., Durham, NC 27703.
-
CREE Research, Inc.
-
-
Sze, S.M.1
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