A Monte Carlo study of low field transport in Al-doped 4H-SiC

Applied Surface Science

Volumn 184, Issue 1-4, 2001, Pages 173-177

  Martinez, A ^a   Lindefelt, U ^a,b   Hjelm, M ^a,c   Nilsson, H E ^c  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b ABB CORPORATE RESEARCH   (Sweden)

^c MID SWEDEN UNIVERSITY   (Sweden)

Author keywords

4H SiC; Anisotropy; Mobility; Monte Carlo simulation

Indexed keywords

ALUMINUM; ANISOTROPY; BAND STRUCTURE; COMPUTER SIMULATION; DOPING (ADDITIVES); HOLE MOBILITY; IONIZATION; MONTE CARLO METHODS; PHONONS;

OHMIC TRANSPORTS;

SILICON CARBIDE;

EID: 0035852195     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(01)00498-6     Document Type: Article

References (9)