Carrier lifetime extraction from a 6H-SiC high voltage p-i-n rectifier reverse recovery waveform

Materials Science Forum

Volumn 264-268, Issue PART 2, 1998, Pages 1065-1068

  Ramungul, N ^a   Khemka, V ^a   Chow, T P ^a   Ghezzo, M ^b   Kretchmer, J ^b  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^b GE GLOBAL RESEARCH   (United States)

Author keywords

Ambipolar Lifetime; Auger Recombination; Carrier Lifetime; High Level Injection; Reverse Recovery; Space Charge Limited Current

Indexed keywords

CHARGE CARRIERS; ELECTRIC SPACE CHARGE; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; THERMAL EFFECTS;

AUGER RECOMBINATION; CARRIER LIFETIME; REVERSE RECOVERY MEASUREMENT;

ELECTRIC RECTIFIERS;

EID: 0031675105     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.264-268.1065     Document Type: Article

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