Numerical analysis of SiC merged PiN Schottky diodes

Materials Science Forum

Volumn 483-485, Issue , 2005, Pages 949-952

  Ayalew, T ^a   Kim, S C ^c   Grasses, T ^a   Selberherr, S ^b  

^a INSTITUTE FOR MICROELECTRONICS   (Austria)

^b INSTITUTE FOR MICROELECTRONICS   (Austria)

^c Korea Electrotechnology Research Institute (KERI)   (South Korea)

Author keywords

Leakage current; MPS diode; Power rectifier; SiC; Simulation; Switching speed

Indexed keywords

COMPUTER SIMULATION; CURRENT DENSITY; ELECTRIC POTENTIAL; SILICON CARBIDE; SWITCHING;

MERGED PIN SCHOTTKY (MPS); SCHOTTKY SPACING; SWITCHING SPEED;

SCHOTTKY BARRIER DIODES;

EID: 35148853138     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-963-6.949     Document Type: Conference Paper

References (5)

1. P. G. Neudeck, in the VLSI Handbook, CRC Press and IEEE Press (2000), p. 6.1.
2. R. Singh et al., IEEE Trans.Electron Devices Vol. 49 (2002), p. 665.
3. Minimos-NT, Device and Circuit Simulator, User's Guide, Institute for Microelectronics, TU-Vienna, Austria (2002), http://www.iue.tuwieu.ac.at/ mmnt/.
4. R. Singh et al., in Proceedings of the 12th International Symposium on Power Semiconductor Devices and ICs (2000), p. 101.
5. A. Hefner Jr. et al., in Conference Record of the 2000 IEEE Industry Applications Conference Vol. 5 (2000), p. 2948.