Impact of ion energy on single-event upset

IEEE Transactions on Nuclear Science

Volumn 45, Issue 6 PART 1, 1998, Pages 2483-2491

  Dodd, P E ^a   Musseau, O ^b   Shaneyfelt, M R ^b   Sexton, F W ^a,b   D'Hoset, C ^a   Hash, G L ^a,b   Martinez, M ^b   Loemker, R A ^b   Lerayt, J L ^a,b   Winokur, P S ^a,b  

^a SANDIA NATIONAL LABORATORIES   (United States)

^b CEA DIF   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; GATES (TRANSISTOR); HEAVY IONS; ION BOMBARDMENT; RADIATION HARDENING; SEMICONDUCTOR STORAGE;

ION ENERGY; ION TRACK STRUCTURES; SINGLE-EVENT UPSET (SEU); STATIC RANDOM ACCESS MEMORY (SRAM);

RANDOM ACCESS STORAGE;

EID: 0032313727     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.736489     Document Type: Article

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