Irradiation Induced Degradation of High-Speed Response of Si p +-i-n+ Photodiodes Studied by Pulsed Laser Measurements

IEEE Transactions on Nuclear Science

Volumn 50, Issue 6 I, 2003, Pages 2003-2010

  Laird, Jamie S ^a   Hirao, Toshio ^a   Onoda, Shinobu ^b   Itoh, Hisayoshi ^a  

^a JAPAN ATOMIC ENERGY AGENCY   (Japan)

^b TOKAI UNIVERSITY   (Japan)

Author keywords

Bandwidth degradation; High speed response; Irradiation induced degradation; P i n photodiode; Pulsed laser

Indexed keywords

BANDWIDTH; IRRADIATION; LASER PULSES; MATHEMATICAL MODELS; PHOTOCURRENTS; SEMICONDUCTOR JUNCTIONS; SILICON; SPURIOUS SIGNAL NOISE;

BANDWIDTH DEGRADATION; HIGH-SPEED RESPONSE; IRRADIATION INDUCED DEGRADATION;

PHOTODIODES;

EID: 1242288180     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2003.820734     Document Type: Conference Paper

References (44)

1. G. S. Messenger and M. S. Ash, The Effects of Radiation on Electronic Systems. New York: Van Nostrand Reinhold, 1992.
2. K. W. Mitchell, "Optimizing photodetectors for radiation environments," IEEE Trans. Nucl. Sci., vol. NS-24, pp. 2294-2297, Dec. 1977.
3. B. E. Anspaugh, GaAs Solar Cell Radiation Handbook. Pasadena, CA: NASA Jet Propulsion Laboratory, 1996, vol. 96-9.
4. 0.47As solar cells," in Proc. 6th Int. Conf. Indium Phosphide and Related Materials 1994, Santa Barbara, CA, 1994, pp. 504-507.
5. H. L. Cotal, S. R. Messenger, R. J. Walters, and G. P. Summers, "Spectral response of electron-irradiated homoepitaxial InP solar cells," in Proc. 25th IEEE Photovoltaic Specialists Conf. 1996, Washington, DC, 1996, pp. 219-222.
6. C. E. Barnes, "Radiation effects in 1.06-μm InGaAs LED's and Si photodiodes," J. Appl. Phys., vol. 50, pp. 5242-5250, 1979.
7. J. J. Wiczer, L. R. Dawson, and C. E. Barnes, "Transient effects of ionising radiation in photodiodes," IEEE Trans. Nucl. Sci., vol. NS-28, pp. 4397-4402, Dec. 1981.
8. R. Korde and A. Ojha, "The effect of neutron irradiation on silicon photodiodes," IEEE Trans. Nucl. Sci., vol. 36, pp. 2169-2175, Dec. 1989.
9. P. W. Marshall, C. J. Dale, M. A. Carts, and K. LaBel, "Particle-induced bit errors in high performance fiber optic data links for satellite data management," IEEE Trans. Nucl. Sci., vol. 41, pp. 1958-1965, Dec. 1994.
10. G. George and J. P. Krusius, "Transient response of high-speed pin photodiodes including diffusion effects," Solid State Electron., vol. 37, pp. 1841-1847, 1994.
11. G. Lucovsky, R. F. Schwarz, and R. B. Emmons, "Transit-time considerations in p-i-n diodes," J. Appl. Phys., vol. 35, pp. 5-12, 1965.
12. S.M. Sze, Physics of Semiconductor Devices. New York: Wiley, 1981.
13. C. Canali, G. Majni, R. Minder, and G. Ottaviani, "Electron and hole drift velocity measurements in silicon and their empirical relation to electric field and temperature," IEEE Trans. Electron Devices, vol. ED-22, pp. 1045-1047, Jan. 1975.
14. L. D. Edmonds, "Charge collection from ion tracks in simple Epi diodes," IEEE Trans. Nucl. Sci., vol. 44, p. 1448, June 1997.
15. J. S. Laird, T. Hirao, S. Onoda, and T. Kamiya, "The role of high-injection effects on the transient ion beam induced current response of high-speed photodetectors," Nucl. Instrum. Methods B, to be published.
16. P.-L. Liu, K. Williams, M. Frankel, and R. Esman, "Saturation characteristics of fast photodetectors," IEEE Trans. Microwave Theory Tech., vol. 47, pp. 1297-1303, 1999.
17. B. G. Svensson and M. Willander, "Generation of divacancies in silicon irradiated by 2 MeV electrons: depth and dose dependence," J. Appl. Phys., vol. 62, 1987.
18. M. Yamaguchi, S. Taylor, S. Matsuda, and O. Kawasaki, "Mechanism for the anomalous degradation of Si solar cells induced by high fluence 1 MeV electron irradiation," Appl. Phys. Lett., vol. 68, 1996.
19. 2 radiation detectors by pulsed laser transient charge injection technique," IEEE Trans. Nucl. Sci., vol. NS-22, p. 229, Feb. 1975.
20. K. J. Williams, R. D. Esman, and M. Dagenais, "Non-linearities in p-i-n microwave photodetectors," IEEE Photon. Tech. Lett., vol. 14, pp. 84-96, Jan. 1996.
21. J. R. Srour, "Displacement damage effects in electronic materials, devices and integrated circuits," in NSREC Short Course, D. G. Platteter, Ed. New York: IEEE, 1988.
22. J. S. Laird, T. Hirao, H. Mori, S. Onoda, T. Kamiya, and H. Itoh, "Development of a new data collection system and chamber for microbeam and laser investigations of single phenomena," Nucl. Instrum. Methods B, vol. 181, pp. 87-94, 2001.
23. P. Blood and J. W. Orton, The Electrical Characterization of Semiconductors: Majority Carrier and Electron States. New York: Academic, 1992.
24. J. S. Laird, T. Hirao, S. Onoda, H. Mori, and H. Itoh, "A system for ultra-fast transient ion and pulsed laser current microscopies as a function of temperature," Solid State Phenomenon, Trans. Tech. Publ., vol. 78-79, pp. 401-406, 2001.
25. A. H. Johnston, "Charge generation and collection in p-n junctions from a pulsed infra-red laser," IEEE Trans. Nucl. Sci., vol. 41, pp. 1694-1702, Dec. 1993.
26. J. S. Melinger, S. Buchner, D. McMorrow, W. J. Stapor, T. R. Weatherford, A. B. Campbell, and H. Eisen, "Critical evaluation of the pulsed laser method for single event effects testing and fundamental studies," IEEE Trans. Nucl. Sci., vol. 41, pp. 2574-2584, Dec. 1994.
27. J. Pankove, Optical Processes in Semiconductors. New York: Dover Science, 1975.
28. J. S. Laird, T. Hirao, S. Onoda, and H. Itoh, "TCAD simulation of trap induced space-charge effects in trapping recombination regions of InGaAs on InP photodiodes," in Proc. Numerical Simulation of Optoelectronic Devices (NUSOD) 2002, Zurich, Switzerland.
29. K. Soda and C. Barnes, "The effects of gamma irradiation on optical isolators," IEEE Trans. Electron Devices, vol. ED-22, pp. 2475-2481. Dec. 1975.
30. T. Ohshima, Y. Morita, I. Nashiyama, O. Kawasaki, T. Hisamatsu, T. Nakao, Y. Wakow, and S. Matsuda, "Mechanism of anomalous degradation of silicon solar cells subjected to high-fluence irradiation," IEEE Trans. Nucl. Sci., vol. 43, pp. 2990-2997, Dec. 1996.
31. H. W. Kraner, Z. Li, and E. Fretwurst, "The use of signal current pulse shape to study the internal field profile and trapping effects in neutron damaged silicon detectors," Nucl. Instrum. Methods A, vol. 326, pp. 350-356, 1993.
32. eff and electrical field transformation at different temperatures in neutron irradiated high resistivity silicon detectors," Nucl. Instrum. Methods A, vol. 360, pp. 458-462, 1995.
33. V. A. J. v. Lint, T. M. Flanagan, R. E. Leadon, J. A. Naber, and V. C. Rogers, Mechanisms of Radiation Effects in Electronic Materials. New York: Wiley, 1980, vol. 1.
34. E. Stoefel, T. Stewart, and J. Ornelas, "Neutron damage to silicon solar cells," IEEE Trans. Nucl. Sci., vol. NS-16, pp. 97-105, Jan. 1969.
35. H. Bleichner, P. Jonsson, N. Keskitalo, and E. Nordlander, "Temperature and injection dependence of the Shockley-Read-Hall lifetime in electron irradiated N-Type silicon," J. Appl. Phys., vol. 79, pp. 9142-9148, 1996.
36. N. Keskitalo, "Irradiation induced defects for lifetime control in silicon," in Faculty of Science and Technology. Uppsala, Sweden: Uppsala Univ. Press, 1997, p. 246.
37. D. K. Schroder, "Carrier lifetimes in silicon," IEEE Trans. Electron Devices, vol. 44, pp. 160-179, Jan. 1997.
38. K. Gill, G. Hall, and B. M. Evoy, "Bulk damage effects in irradiated silicon detectors due to clustered divacancies," J. Appl. Phys., vol. 82, pp. 126-136, 1997.
39. N. E. Islam, E. Schamiloglu, T. H. Kirby, B. Shipley, W. T. Kemp, J. S. H. Schoenberg, and J. W. H. Jr., "Electron irradiation effects on photoconductive semiconductor switches (PCSS's) used in subnanosecond transient generators," IEEE Trans. Nucl. Sci., vol. 46, pp. 1722-1727, Dec. 1999.
40. D. Menichelli, M. Bruzzi, Z. Li, and V. Erimin, "Modeling of observed double-junction effect," Nucl. Instrum. Methods A, vol. 426, pp. 135-139, 1999.
41. C. E. Barnes and G. A. Samara, "Forward bias induced annealing of the E center in silicon," App. Phys. Lett., vol. 48, pp. 934-936, 1986.
42. R. J. Walters, G. J. Shaw, G. P. Summers, and S. R. Messenger, "Continued study of the photo-injection annealing of thermally diffused InP solar cells," in Proc. 5th Int. Conf. Indium Phosphide and Related Materials 1993, Paris, France, 1993, pp. 605-606.
43. J. R. Srour, S. C. Chen, S. Othmer, and R. A. Hartmann, "Neutron damage mechanisms in charge transfer devices," IEEE Trans. Nucl. Sci., vol. NS-25, pp. 1251-1260, Dec. 1978.
44. D. V. Lang, Thermally Stimulated Relaxation in Solids. New York: Springer-Verlag, 1979, vol. 37.