Evaluation of the diffusion length in silicon diodes by means of the lateral IBIC technique

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 158, Issue 1, 1999, Pages 476-480

  Vittone, E ^a   Fizzotti, F ^a   Gargioni, E ^a   Lu, R ^a   Polesello, P ^a   LoGiudice, A ^a   Manfredotti, C ^a   Galassini, S ^b   Jaksic, M ^c  

^a UNIVERSITY OF TURIN   (Italy)

^b UNIVERSITY OF VERONA   (Italy)

^c RUDER BO KOVI INSTITUTE   (Croatia)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRANSFER; ELECTRIC FIELDS; ELECTRON TRANSPORT PROPERTIES; ION BOMBARDMENT; PROTON IRRADIATION; SEMICONDUCTING SILICON;

CHARGE COLLECTION EFFICIENCY; ION BEAM INDUCED CHARGE (IBIC);

SEMICONDUCTOR DIODES;

EID: 0033309642     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(99)00383-3     Document Type: Article

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