Evaluation of the characteristics of silicon carbide diodes using transient-IBIC technique

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 210, Issue , 2003, Pages 201-205

  Ohshima, Takeshi ^a   Lee, Kin Kiong ^a   Onoda, Shinobu ^b   Kamiya, Tomihiro ^a   Oikawa, Masakazu ^a   Laird, Jamie S ^a   Hirao, Toshio ^a   Itoh, Hisayoshi ^a  

^a JAPAN ATOMIC ENERGY AGENCY   (Japan)

^b TOKAI UNIVERSITY   (Japan)

Author keywords

Silicon carbide; Transient ion beam induced current

Indexed keywords

ION BEAMS; RADIATION DAMAGE; SINTERING; TRANSIENTS;

SPATIAL QUALITY;

SILICON CARBIDE;

EID: 0041473936     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(03)01070-X     Document Type: Conference Paper

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