Room-temperature polariton lasing in semiconductor microcavities

Physical Review Letters

Volumn 98, Issue 12, 2007, Pages

  Christopoulos, S ^a   Von Högersthal, G Baldassarri Höger ^a   Grundy, A J D ^a   Lagoudakis, P G ^a   Kavokin, A V ^a   Baumberg, J J ^a   Christmann, G ^b   Butte R ^b   Feltin, E ^b   Carlin, J F ^b   Grandjean, N ^b  

^a UNIVERSITY OF SOUTHAMPTON   (United Kingdom)

^b EPFL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM NITRIDE; LUMINESCENCE; OPTICAL PUMPING; SEMICONDUCTOR MATERIALS; SURFACE EMITTING LASERS; THERMAL EFFECTS;

COUPLING REGIME; POLARITON LASING; SEMICONDUCTOR MICROCAVITIES; THRESHOLD TRANSITION;

MICROCAVITIES;

EID: 33947509125     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.98.126405     Document Type: Article

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