Effects of built-in polarization field on the optical properties of AlGaN/GaN quantum wells

Physica Status Solidi (A) Applied Research

Volumn 176, Issue 1, 1999, Pages 219-225

  Grandjean, N ^a   Damilano, B ^a   Dalmasso, S ^a   Leroux, M ^a   Laugt M ^a   Massies, J ^a  

^a CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELD EFFECTS; EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; POLARIZATION; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH;

PHOTOLUMINESCENCE LINEWIDTH; SPONTANEOUS POLARIZATION; TEMPERATURE DEPENDENCE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0033221906     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-396X(199911)176:1<219::AID-PSSA219>3.0.CO;2-M     Document Type: Article

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