Structural and optical properties of AlInN and AlGaInN on GaN grown by metalorganic vapor phase epitaxy

Journal of Crystal Growth

Volumn 195, Issue 1-4, 1998, Pages 309-313

  Yamaguchi, Shigeo ^a   Kariya, Michihiko ^a   Nitta, Shugo ^a   Kato, Hisaki ^a   Takeuchi, Tetsuya ^a   Wetzel, Christian ^a   Amano, Hiroshi ^a   Akasaki, Isamu ^a  

^a MEIJO UNIVERSITY   (Japan)

Author keywords

AlInN; GaN; Lattice matched; Metalorganic vapor phase epitaxy; Photoluminescence; X ray diffraction

Indexed keywords

CRYSTAL LATTICES; FILM GROWTH; LIGHT ABSORPTION; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; X RAY DIFFRACTION ANALYSIS;

ABSORPTION SPECTRAL PEAKS;

SEMICONDUCTING FILMS;

EID: 0032477133     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00629-0     Document Type: Article

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