Transport and mobility properties of bulk indium nitride (InN) and a two-dimensional electron gas in an InGaN/GaN quantum well

Journal of Electronic Materials

Volumn 36, Issue 10, 2007, Pages 1303-1312

  Yarar, Z ^a   Ozdemir, B ^b   Ozdemir, M ^b  

^a MERSIN UNIVERSITY   (Turkey)

^b CUKUROVA UNIVERSITY   (Turkey)

Author keywords

AlN; Drift velocity; GaN; InGaN GaN; InN; Mobility; Monte Carlo; Quantum well; Scattering; Schr dinger Poisson

Indexed keywords

DRIFT VELOCITY; SCHRÖDINGER-POISSON;

ELECTRON GAS; ELECTRON SCATTERING; MONTE CARLO METHODS; SEMICONDUCTOR QUANTUM WELLS;

INDIUM COMPOUNDS;

EID: 34848868468     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-007-0210-9     Document Type: Article

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