Electron transport properties in AlGaN/InGaN/GaN double heterostructures grown by metalorganic vapor phase epitaxy

Applied Physics Letters

Volumn 84, Issue 13, 2004, Pages 2313-2315

  Wang, C X ^a,b   Tsubaki, K ^a,c   Kobayashi, N ^a   Makimoto, T ^a   Maeda, N ^b  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

^b NTT CORPORATION   (Japan)

^c TOYO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; COMPUTER SIMULATION; ELECTRON GAS; ELECTRON MOBILITY; ELECTRON TRANSPORT PROPERTIES; EVAPORATION; FIELD EFFECT TRANSISTORS; HALL EFFECT; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SURFACE ROUGHNESS; X RAY DIFFRACTION ANALYSIS;

ALLOY DISORDERS; CARRIER GASES; DOUBLE HETEROSTRUCTURES (DH); HETEROSTRUCTURE FIELD EFFECT TRANSISTORS (HFET); ROOT MEAN SQUARE (RMS);

HETEROJUNCTIONS;

EID: 2142657916     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1690879     Document Type: Article

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