Device characteristics of the GaN/InGaN-doped channel HFETs

IEEE Electron Device Letters

Volumn 22, Issue 11, 2001, Pages 501-503

  Hsin, Yue Ming ^a,b   Hsu, Hung Tsao ^b   Chuo, Chang Cheng ^b   Chyi, Jen Inn ^a,b  

^a IEEE   (Taiwan)

^b NATIONAL CENTRAL UNIVERSITY   (Taiwan)

Author keywords

GaN; HFET; InGaN

Indexed keywords

DRAIN CURRENT; HALL MOBILITY; HETEROJUNCTION FIELD EFFECT TRANSISTOR; INDIUM GALLIUM NITRIDE; LOW-PRESSURE METALLORGANIC CHEMICAL VAPOR DEPOSITION; TRIETHYLGALLIUM; TRIMETHYLIDIUM;

AMMONIA; CARRIER CONCENTRATION; ELECTRIC BREAKDOWN; ELECTRIC CURRENTS; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OHMIC CONTACTS; REACTIVE ION ETCHING; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; SILANES;

FIELD EFFECT TRANSISTORS;

EID: 0035505401     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.962643     Document Type: Article

References (9)

1. GaN microwave electronics
2. Application of GaN-based heterojunction FET's for advanced wireless communication
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4. T and low microwave noise
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6. Interdiffusion of In and Ga in InGaN/GaN multiple quantum wells
7. Observation of deep traps responsible for current collapse in GaN metal-semiconductor field-effect transistors
8. Extrinsic performance limitations of AlGaN/GaM heterostructure field effect transistors
9. Trapping effects and microwave power performance in AlGaN/GaN HEMTs