Design and analysis of InGaN-GaN Modulation Doped Field-Effect Transistors (MODFETs) for over 60 GHz operation

International Journal of Infrared and Millimeter Waves

Volumn 19, Issue 12, 1998, Pages 1633-1647

  Islam, S K ^a   Jain, F C ^b   Zhao, G ^b   Heller, E ^b  

^a UNIVERSITY OF NORTH FLORIDA   (United States)

^b UNIVERSITY OF CONNECTICUT   (United States)

Author keywords

MODFET; Two dimensional electron gas (2 DEG, HFET, unity current gain cutoff frequency fT)

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRON ENERGY LEVELS; ELECTRON GAS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; TRANSCONDUCTANCE;

MODULATION DOPED FIELD EFFECT TRANSISTORS (MODFET);

FIELD EFFECT TRANSISTORS;

EID: 0032304615     PISSN: 01959271     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1021711009335     Document Type: Article

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